Electrical switching in metallic carbon nanotubes

Young Woo Son, Jisoon Ihm, Marvin L. Cohen, Steven G. Louie, Hyoung Joon Choi

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than 2 orders of magnitude with experimentally attainable electric fields. This novel property has its origin that backscattering of conduction electrons by impurities or defects in the nanotubes is strongly dependent on the strength and/or direction of the applied electric fields. We expect this property to open a path to new device applications of metallic carbon nanotubes.

Original languageEnglish
Article number216602
JournalPhysical Review Letters
Volume95
Issue number21
DOIs
Publication statusPublished - 2005 Nov 18

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carbon nanotubes
electric fields
nanotubes
impurities
defects
conduction electrons
backscattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Son, Young Woo ; Ihm, Jisoon ; Cohen, Marvin L. ; Louie, Steven G. ; Choi, Hyoung Joon. / Electrical switching in metallic carbon nanotubes. In: Physical Review Letters. 2005 ; Vol. 95, No. 21.
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Electrical switching in metallic carbon nanotubes. / Son, Young Woo; Ihm, Jisoon; Cohen, Marvin L.; Louie, Steven G.; Choi, Hyoung Joon.

In: Physical Review Letters, Vol. 95, No. 21, 216602, 18.11.2005.

Research output: Contribution to journalArticle

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