Electrical transport properties in electroless-etched Si nanowire field-effect transistors

Kyeong Ju Moon, Ji Hyuk Choi, Tae Il Lee, Moon Ho Ham, Wan Joo Maeng, Inchan Hwang, Hyungjun Kim, Jae Min Myoung

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.

Original languageEnglish
Pages (from-to)2407-2410
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

Fingerprint

Field effect transistors
Transport properties
Nanowires
nanowires
field effect transistors
transport properties
wafers
Gate dielectrics
Drain current
high current
Etching
etching
Ions
Nanoparticles
nanoparticles
configurations
ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Moon, Kyeong Ju ; Choi, Ji Hyuk ; Lee, Tae Il ; Ham, Moon Ho ; Maeng, Wan Joo ; Hwang, Inchan ; Kim, Hyungjun ; Myoung, Jae Min. / Electrical transport properties in electroless-etched Si nanowire field-effect transistors. In: Microelectronic Engineering. 2010 ; Vol. 87, No. 11. pp. 2407-2410.
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Electrical transport properties in electroless-etched Si nanowire field-effect transistors. / Moon, Kyeong Ju; Choi, Ji Hyuk; Lee, Tae Il; Ham, Moon Ho; Maeng, Wan Joo; Hwang, Inchan; Kim, Hyungjun; Myoung, Jae Min.

In: Microelectronic Engineering, Vol. 87, No. 11, 01.11.2010, p. 2407-2410.

Research output: Contribution to journalArticle

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AU - Moon, Kyeong Ju

AU - Choi, Ji Hyuk

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AU - Hwang, Inchan

AU - Kim, Hyungjun

AU - Myoung, Jae Min

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AB - We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.

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