We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R01-2007-000-20143-0 ).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering