Electrical transport properties in electroless-etched Si nanowire field-effect transistors

Kyeong Ju Moon, Ji Hyuk Choi, Tae Il Lee, Moon Ho Ham, Wan Joo Maeng, Inchan Hwang, Hyungjun Kim, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.

Original languageEnglish
Pages (from-to)2407-2410
Number of pages4
JournalMicroelectronic Engineering
Issue number11
Publication statusPublished - 2010 Nov

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R01-2007-000-20143-0 ).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


Dive into the research topics of 'Electrical transport properties in electroless-etched Si nanowire field-effect transistors'. Together they form a unique fingerprint.

Cite this