Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy

Young S. Park, Chang M. Park, J. W. Lee, H. Y. Cho, T. W. Kang, Kyung Hwa Yoo, Min Soo Son, Myung Soo Han

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Abstract

We investigated the electrical properties of a GaN nanorod p-n junction diode patterned on a Si O2 substrate using e-beam lithography. The electron transport mechanisms were characterized by temperature-dependence and current-voltage measurements. At a low temperature, the current-voltage curves showed that the current slowly increased with a given voltage for the forward bias and hardly changed for the reverse bias, indicating the tunneling current dominates through the deep trap barrier. At a high temperature, however, the current-voltage curves exhibited strong temperature dependence suggesting that thermionic emission with an activation energy of 19.1 meV over a barrier dominated.

Original languageEnglish
Article number066107
JournalJournal of Applied Physics
Volume103
Issue number6
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Park, Y. S., Park, C. M., Lee, J. W., Cho, H. Y., Kang, T. W., Yoo, K. H., Son, M. S., & Han, M. S. (2008). Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy. Journal of Applied Physics, 103(6), [066107]. https://doi.org/10.1063/1.2896636