Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy

Young S. Park, Chang M. Park, J. W. Lee, H. Y. Cho, T. W. Kang, Kyung-hwa Yoo, Min Soo Son, Myung Soo Han

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We investigated the electrical properties of a GaN nanorod p-n junction diode patterned on a Si O2 substrate using e-beam lithography. The electron transport mechanisms were characterized by temperature-dependence and current-voltage measurements. At a low temperature, the current-voltage curves showed that the current slowly increased with a given voltage for the forward bias and hardly changed for the reverse bias, indicating the tunneling current dominates through the deep trap barrier. At a high temperature, however, the current-voltage curves exhibited strong temperature dependence suggesting that thermionic emission with an activation energy of 19.1 meV over a barrier dominated.

Original languageEnglish
Article number066107
JournalJournal of Applied Physics
Volume103
Issue number6
DOIs
Publication statusPublished - 2008 Apr 8

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homojunctions
nanorods
molecular beam epitaxy
transport properties
electric potential
junction diodes
temperature dependence
thermionic emission
curves
p-n junctions
electrical measurement
lithography
electrical properties
traps
activation energy
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, Young S. ; Park, Chang M. ; Lee, J. W. ; Cho, H. Y. ; Kang, T. W. ; Yoo, Kyung-hwa ; Son, Min Soo ; Han, Myung Soo. / Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 6.
@article{e38fe5924a224e1ca2eef63e06c51ad4,
title = "Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy",
abstract = "We investigated the electrical properties of a GaN nanorod p-n junction diode patterned on a Si O2 substrate using e-beam lithography. The electron transport mechanisms were characterized by temperature-dependence and current-voltage measurements. At a low temperature, the current-voltage curves showed that the current slowly increased with a given voltage for the forward bias and hardly changed for the reverse bias, indicating the tunneling current dominates through the deep trap barrier. At a high temperature, however, the current-voltage curves exhibited strong temperature dependence suggesting that thermionic emission with an activation energy of 19.1 meV over a barrier dominated.",
author = "Park, {Young S.} and Park, {Chang M.} and Lee, {J. W.} and Cho, {H. Y.} and Kang, {T. W.} and Kyung-hwa Yoo and Son, {Min Soo} and Han, {Myung Soo}",
year = "2008",
month = "4",
day = "8",
doi = "10.1063/1.2896636",
language = "English",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy. / Park, Young S.; Park, Chang M.; Lee, J. W.; Cho, H. Y.; Kang, T. W.; Yoo, Kyung-hwa; Son, Min Soo; Han, Myung Soo.

In: Journal of Applied Physics, Vol. 103, No. 6, 066107, 08.04.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy

AU - Park, Young S.

AU - Park, Chang M.

AU - Lee, J. W.

AU - Cho, H. Y.

AU - Kang, T. W.

AU - Yoo, Kyung-hwa

AU - Son, Min Soo

AU - Han, Myung Soo

PY - 2008/4/8

Y1 - 2008/4/8

N2 - We investigated the electrical properties of a GaN nanorod p-n junction diode patterned on a Si O2 substrate using e-beam lithography. The electron transport mechanisms were characterized by temperature-dependence and current-voltage measurements. At a low temperature, the current-voltage curves showed that the current slowly increased with a given voltage for the forward bias and hardly changed for the reverse bias, indicating the tunneling current dominates through the deep trap barrier. At a high temperature, however, the current-voltage curves exhibited strong temperature dependence suggesting that thermionic emission with an activation energy of 19.1 meV over a barrier dominated.

AB - We investigated the electrical properties of a GaN nanorod p-n junction diode patterned on a Si O2 substrate using e-beam lithography. The electron transport mechanisms were characterized by temperature-dependence and current-voltage measurements. At a low temperature, the current-voltage curves showed that the current slowly increased with a given voltage for the forward bias and hardly changed for the reverse bias, indicating the tunneling current dominates through the deep trap barrier. At a high temperature, however, the current-voltage curves exhibited strong temperature dependence suggesting that thermionic emission with an activation energy of 19.1 meV over a barrier dominated.

UR - http://www.scopus.com/inward/record.url?scp=41549148263&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41549148263&partnerID=8YFLogxK

U2 - 10.1063/1.2896636

DO - 10.1063/1.2896636

M3 - Article

AN - SCOPUS:41549148263

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 066107

ER -