Electrically conductive anti-reflecting nanostructure for chalcogenide thin-film solar cells

Ji Hyeon Park, Tae Il Lee, Sung Hwan Hwang, Kyeong Ju Moon, Jae Min Myoung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electrically conducting aluminum (Al)-doped ZnO nanorods (NRs) film has been introduced as an anti-reflective (AR) layer for effective light trapping in chalcogenide thin-film solar cells. Results indicate that the Al-doping significantly reduced the electrical contact resistance between the Ag top electrode and the AR layer. The Al-doped ZnO NRs exhibited low average reflectance (4.5%) over the entire visible and near-infrared range, and changed the nature of electrical contact between the Ag electrode and the AR layer from Schottky to Ohmic. Finally, the CuInS2 solar cell coated with the Al-doped ZnO NRs exhibited huge enhancement in photovoltaic efficiency from 9.57% to 11.70% due to the lowering series resistance and the increase in the short-circuit current density, when compared with that of a solar cell without the AR layer.

Original languageEnglish
Pages (from-to)813-820
Number of pages8
JournalProgress in Photovoltaics: Research and Applications
Volume23
Issue number7
DOIs
Publication statusPublished - 2015 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electrically conductive anti-reflecting nanostructure for chalcogenide thin-film solar cells'. Together they form a unique fingerprint.

  • Cite this