Electrically conductive anti-reflecting nanostructure for chalcogenide thin-film solar cells

Ji Hyeon Park, Tae Il Lee, Sung Hwan Hwang, Kyeong Ju Moon, Jae Min Myoung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electrically conducting aluminum (Al)-doped ZnO nanorods (NRs) film has been introduced as an anti-reflective (AR) layer for effective light trapping in chalcogenide thin-film solar cells. Results indicate that the Al-doping significantly reduced the electrical contact resistance between the Ag top electrode and the AR layer. The Al-doped ZnO NRs exhibited low average reflectance (4.5%) over the entire visible and near-infrared range, and changed the nature of electrical contact between the Ag electrode and the AR layer from Schottky to Ohmic. Finally, the CuInS2 solar cell coated with the Al-doped ZnO NRs exhibited huge enhancement in photovoltaic efficiency from 9.57% to 11.70% due to the lowering series resistance and the increase in the short-circuit current density, when compared with that of a solar cell without the AR layer.

Original languageEnglish
Pages (from-to)813-820
Number of pages8
JournalProgress in Photovoltaics: Research and Applications
Volume23
Issue number7
DOIs
Publication statusPublished - 2015 Jul 1

Fingerprint

Aluminum
Nanostructures
solar cells
Nanorods
nanorods
aluminum
thin films
Solar cells
Electrodes
electrodes
Contact resistance
short circuit currents
contact resistance
Short circuit currents
electric contacts
Current density
trapping
Doping (additives)
current density
Infrared radiation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Park, Ji Hyeon ; Lee, Tae Il ; Hwang, Sung Hwan ; Moon, Kyeong Ju ; Myoung, Jae Min. / Electrically conductive anti-reflecting nanostructure for chalcogenide thin-film solar cells. In: Progress in Photovoltaics: Research and Applications. 2015 ; Vol. 23, No. 7. pp. 813-820.
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abstract = "Electrically conducting aluminum (Al)-doped ZnO nanorods (NRs) film has been introduced as an anti-reflective (AR) layer for effective light trapping in chalcogenide thin-film solar cells. Results indicate that the Al-doping significantly reduced the electrical contact resistance between the Ag top electrode and the AR layer. The Al-doped ZnO NRs exhibited low average reflectance (4.5{\%}) over the entire visible and near-infrared range, and changed the nature of electrical contact between the Ag electrode and the AR layer from Schottky to Ohmic. Finally, the CuInS2 solar cell coated with the Al-doped ZnO NRs exhibited huge enhancement in photovoltaic efficiency from 9.57{\%} to 11.70{\%} due to the lowering series resistance and the increase in the short-circuit current density, when compared with that of a solar cell without the AR layer.",
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Electrically conductive anti-reflecting nanostructure for chalcogenide thin-film solar cells. / Park, Ji Hyeon; Lee, Tae Il; Hwang, Sung Hwan; Moon, Kyeong Ju; Myoung, Jae Min.

In: Progress in Photovoltaics: Research and Applications, Vol. 23, No. 7, 01.07.2015, p. 813-820.

Research output: Contribution to journalArticle

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AU - Park, Ji Hyeon

AU - Lee, Tae Il

AU - Hwang, Sung Hwan

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