Electro-optic and thermal studies of multi-quantum well light emitting diodes in InGaN/GaN/sapphire structure

Jeong Park, Moo Whan Shin, Chin C. Lee

Research output: Contribution to journalConference article

Abstract

We present an electrical model for quantum-well light emitting diodes (LEDs) with a current spreading layer. The LEDs studied have a Multi-Quantum Well (MQW) between p-GaN and the n-GaN grown on sapphire. The model consists of a diode connected with a series resistor resulting from the current spreading layer. Using the model, the I-V curve of the diode itself is extracted from the measured LED I-V curve. The model also includes a current equation for the diode itself which was subsequently sought to match the extracted I-V curve. In the seeking process, junction temperature (T j) rather than case temperature (T c) was used in the equation. The diode model allows one to calculate the reduction on conversion efficiency caused by the current spreading layer. Results show that the current spreading layer causes 20% of the efficiency reduction at T j = 107°C. The model can be used to optimize the conversion efficiency by balancing the transparency and the resistance of current spreading layer.

Original languageEnglish
Article numberE10.4
Pages (from-to)563-568
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume831
Publication statusPublished - 2005 Aug 25

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Aluminum Oxide
Electrooptical effects
Sapphire
Semiconductor quantum wells
electro-optics
Light emitting diodes
sapphire
light emitting diodes
quantum wells
Diodes
diodes
Conversion efficiency
curves
resistors
Resistors
Transparency
Hot Temperature
Temperature
temperature
causes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Electro-optic and thermal studies of multi-quantum well light emitting diodes in InGaN/GaN/sapphire structure",
abstract = "We present an electrical model for quantum-well light emitting diodes (LEDs) with a current spreading layer. The LEDs studied have a Multi-Quantum Well (MQW) between p-GaN and the n-GaN grown on sapphire. The model consists of a diode connected with a series resistor resulting from the current spreading layer. Using the model, the I-V curve of the diode itself is extracted from the measured LED I-V curve. The model also includes a current equation for the diode itself which was subsequently sought to match the extracted I-V curve. In the seeking process, junction temperature (T j) rather than case temperature (T c) was used in the equation. The diode model allows one to calculate the reduction on conversion efficiency caused by the current spreading layer. Results show that the current spreading layer causes 20{\%} of the efficiency reduction at T j = 107°C. The model can be used to optimize the conversion efficiency by balancing the transparency and the resistance of current spreading layer.",
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Electro-optic and thermal studies of multi-quantum well light emitting diodes in InGaN/GaN/sapphire structure. / Park, Jeong; Shin, Moo Whan; Lee, Chin C.

In: Materials Research Society Symposium Proceedings, Vol. 831, E10.4, 25.08.2005, p. 563-568.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electro-optic and thermal studies of multi-quantum well light emitting diodes in InGaN/GaN/sapphire structure

AU - Park, Jeong

AU - Shin, Moo Whan

AU - Lee, Chin C.

PY - 2005/8/25

Y1 - 2005/8/25

N2 - We present an electrical model for quantum-well light emitting diodes (LEDs) with a current spreading layer. The LEDs studied have a Multi-Quantum Well (MQW) between p-GaN and the n-GaN grown on sapphire. The model consists of a diode connected with a series resistor resulting from the current spreading layer. Using the model, the I-V curve of the diode itself is extracted from the measured LED I-V curve. The model also includes a current equation for the diode itself which was subsequently sought to match the extracted I-V curve. In the seeking process, junction temperature (T j) rather than case temperature (T c) was used in the equation. The diode model allows one to calculate the reduction on conversion efficiency caused by the current spreading layer. Results show that the current spreading layer causes 20% of the efficiency reduction at T j = 107°C. The model can be used to optimize the conversion efficiency by balancing the transparency and the resistance of current spreading layer.

AB - We present an electrical model for quantum-well light emitting diodes (LEDs) with a current spreading layer. The LEDs studied have a Multi-Quantum Well (MQW) between p-GaN and the n-GaN grown on sapphire. The model consists of a diode connected with a series resistor resulting from the current spreading layer. Using the model, the I-V curve of the diode itself is extracted from the measured LED I-V curve. The model also includes a current equation for the diode itself which was subsequently sought to match the extracted I-V curve. In the seeking process, junction temperature (T j) rather than case temperature (T c) was used in the equation. The diode model allows one to calculate the reduction on conversion efficiency caused by the current spreading layer. Results show that the current spreading layer causes 20% of the efficiency reduction at T j = 107°C. The model can be used to optimize the conversion efficiency by balancing the transparency and the resistance of current spreading layer.

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