Abstract
Though many studies examined the properties of the class of IIIA-VIA and IVA-VIA layered materials, few have delved into the electrochemical aspect of such materials. In light of the burgeoning interest in layered structures towards various electrocatalytic applications, we endeavored to study the inherent electrochemical properties of representative layered materials of this class, GaSe and GeS, and their impact towards electrochemical sensing of redox probes as well as catalysis of oxygen reduction, oxygen evolution and hydrogen evolution reactions. In contrast to the typical sandwich structure of MoS2 layered materials, GeS is isoelectronic to black phosphorus with the same structure; GaSe is a layered material consisting of GaSe sheets bonded in the sequence Se-Ga-Ga-Se. We characterized GaSe and GeS by employing scanning electron microscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy complemented by electronic structure calculations. It was found that the encompassing surface oxide layers on GaSe and GeS greatly influenced their electrochemical properties, especially their electrocatalytic capabilities towards hydrogen evolution reaction. These findings provide fresh insight into the electrochemical properties of these IIIA-VIA and IVA-VIA layered structures which enables development for future applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1699-1711 |
| Number of pages | 13 |
| Journal | Physical Chemistry Chemical Physics |
| Volume | 18 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2016 Jan 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
Cite this
}
Electrochemistry of layered GaSe and GeS : Applications to ORR, OER and HER. / Tan, Shu Min; Chua, Chun Kiang; Sedmidubský, David; Sofer, Zdenek B.; Pumera, Martin.
In: Physical Chemistry Chemical Physics, Vol. 18, No. 3, 01.01.2016, p. 1699-1711.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrochemistry of layered GaSe and GeS
T2 - Applications to ORR, OER and HER
AU - Tan, Shu Min
AU - Chua, Chun Kiang
AU - Sedmidubský, David
AU - Sofer, Zdenek B.
AU - Pumera, Martin
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Though many studies examined the properties of the class of IIIA-VIA and IVA-VIA layered materials, few have delved into the electrochemical aspect of such materials. In light of the burgeoning interest in layered structures towards various electrocatalytic applications, we endeavored to study the inherent electrochemical properties of representative layered materials of this class, GaSe and GeS, and their impact towards electrochemical sensing of redox probes as well as catalysis of oxygen reduction, oxygen evolution and hydrogen evolution reactions. In contrast to the typical sandwich structure of MoS2 layered materials, GeS is isoelectronic to black phosphorus with the same structure; GaSe is a layered material consisting of GaSe sheets bonded in the sequence Se-Ga-Ga-Se. We characterized GaSe and GeS by employing scanning electron microscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy complemented by electronic structure calculations. It was found that the encompassing surface oxide layers on GaSe and GeS greatly influenced their electrochemical properties, especially their electrocatalytic capabilities towards hydrogen evolution reaction. These findings provide fresh insight into the electrochemical properties of these IIIA-VIA and IVA-VIA layered structures which enables development for future applications.
AB - Though many studies examined the properties of the class of IIIA-VIA and IVA-VIA layered materials, few have delved into the electrochemical aspect of such materials. In light of the burgeoning interest in layered structures towards various electrocatalytic applications, we endeavored to study the inherent electrochemical properties of representative layered materials of this class, GaSe and GeS, and their impact towards electrochemical sensing of redox probes as well as catalysis of oxygen reduction, oxygen evolution and hydrogen evolution reactions. In contrast to the typical sandwich structure of MoS2 layered materials, GeS is isoelectronic to black phosphorus with the same structure; GaSe is a layered material consisting of GaSe sheets bonded in the sequence Se-Ga-Ga-Se. We characterized GaSe and GeS by employing scanning electron microscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy complemented by electronic structure calculations. It was found that the encompassing surface oxide layers on GaSe and GeS greatly influenced their electrochemical properties, especially their electrocatalytic capabilities towards hydrogen evolution reaction. These findings provide fresh insight into the electrochemical properties of these IIIA-VIA and IVA-VIA layered structures which enables development for future applications.
UR - http://www.scopus.com/inward/record.url?scp=84954185344&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84954185344&partnerID=8YFLogxK
U2 - 10.1039/c5cp06682d
DO - 10.1039/c5cp06682d
M3 - Article
AN - SCOPUS:84954185344
VL - 18
SP - 1699
EP - 1711
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
SN - 1463-9076
IS - 3
ER -