TY - JOUR
T1 - Electrode engineering for improving resistance switching of Sb 2O5 films
AU - Ahn, Youngbae
AU - Choi, Yu Jin
AU - Park, Ji Woon
AU - Lee, Jong Ho
AU - Kim, Gun Hwan
AU - Kim, Young Seok
AU - Heo, Jaeyeong
AU - Kim, Hyeong Joon
AU - Hwang, Cheol Seong
PY - 2013/9
Y1 - 2013/9
N2 - The resistive switching of amorphous Sb2O5 films was examined in Sb/Sb2O5/Pt, Sb/Sb2O 5/TiN(O), and Sb/Sb2O5/Sb(O) structures, which show reset powers of 0.6, 0.6, and 80mW, and switching endurances of 250, 480, and 100 cycles, respectively. The improved endurance achieved in the Sb/Sb 2O5/TiN(O) was ascribed to the appropriate supply of oxygen from the TiN(O) electrode. The reset status of the Sb/Sb 2O5/ Sb(O) was identical to that of the pristine state due to excessive supply of oxygen from the Sb(O) electrode. The appropriate supply oxygen from an electrode to the switching oxide is crucial to improve the resistance switching properties.
AB - The resistive switching of amorphous Sb2O5 films was examined in Sb/Sb2O5/Pt, Sb/Sb2O 5/TiN(O), and Sb/Sb2O5/Sb(O) structures, which show reset powers of 0.6, 0.6, and 80mW, and switching endurances of 250, 480, and 100 cycles, respectively. The improved endurance achieved in the Sb/Sb 2O5/TiN(O) was ascribed to the appropriate supply of oxygen from the TiN(O) electrode. The reset status of the Sb/Sb 2O5/ Sb(O) was identical to that of the pristine state due to excessive supply of oxygen from the Sb(O) electrode. The appropriate supply oxygen from an electrode to the switching oxide is crucial to improve the resistance switching properties.
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U2 - 10.7567/APEX.6.091102
DO - 10.7567/APEX.6.091102
M3 - Article
AN - SCOPUS:84883687774
SN - 1882-0778
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
IS - 9
M1 - 091102
ER -