Electrode engineering for improving resistance switching of Sb 2O5 films

Youngbae Ahn, Yu Jin Choi, Ji Woon Park, Jong Ho Lee, Gun Hwan Kim, Young Seok Kim, Jaeyeong Heo, Hyeong Joon Kim, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review


The resistive switching of amorphous Sb2O5 films was examined in Sb/Sb2O5/Pt, Sb/Sb2O 5/TiN(O), and Sb/Sb2O5/Sb(O) structures, which show reset powers of 0.6, 0.6, and 80mW, and switching endurances of 250, 480, and 100 cycles, respectively. The improved endurance achieved in the Sb/Sb 2O5/TiN(O) was ascribed to the appropriate supply of oxygen from the TiN(O) electrode. The reset status of the Sb/Sb 2O5/ Sb(O) was identical to that of the pristine state due to excessive supply of oxygen from the Sb(O) electrode. The appropriate supply oxygen from an electrode to the switching oxide is crucial to improve the resistance switching properties.

Original languageEnglish
Article number091102
JournalApplied Physics Express
Issue number9
Publication statusPublished - 2013 Sept

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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