Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

Jihyun Ka, Edward Namkyu Cho, Min Jung Lee, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial current-voltage (I-V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area.

Original languageEnglish
Pages (from-to)675-678
Number of pages4
JournalCurrent Applied Physics
Volume15
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Thin film transistors
Zinc oxide
zinc oxides
indium
transistors
penetration
Metals
Electrodes
electrodes
thin films
metals
electrode materials
Amorphous semiconductors
oxygen
Oxygen vacancies
Photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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title = "Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors",
abstract = "Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial current-voltage (I-V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area.",
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Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors. / Ka, Jihyun; Cho, Edward Namkyu; Lee, Min Jung; Myoung, Jae Min; Yun, Ilgu.

In: Current Applied Physics, Vol. 15, No. 6, 01.06.2015, p. 675-678.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

AU - Ka, Jihyun

AU - Cho, Edward Namkyu

AU - Lee, Min Jung

AU - Myoung, Jae Min

AU - Yun, Ilgu

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AB - Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial current-voltage (I-V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area.

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