Electroluminescence mechanism in SiO x layers containing radiative centers

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, J. H. Song

Research output: Contribution to journalArticle

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Abstract

Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich silicon oxides (SRSOs) were fabricated by rf magnetron sputter deposition and Ge-implanted SiO 2 films were fabricated by ion implantation following the thermal oxidation of Si. Blue and violet photoluminescence were observed from the SRSO and the Ge-implanted SiO 2, respectively. However, the electroluminescence (EL) spectra from both oxides exhibited red and near-infrared luminescence bands. Strong EL was observed only under reverse bias conditions on metal-luminescent oxide-semiconductor structures. The EL intensity and peak position were varied with applied voltages. According to the EL and current-voltage measurements, it is concluded that the possible EL mechanism is the impact ionization of ground state electrons in the radiative centers.

Original languageEnglish
Pages (from-to)4078-4081
Number of pages4
JournalJournal of Applied Physics
Volume91
Issue number7
DOIs
Publication statusPublished - 2002 Apr 1

Fingerprint

electroluminescence
silicon oxides
oxides
silicon
electrical measurement
ion implantation
luminescence
photoluminescence
ionization
oxidation
ground state
electric potential
metals
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Bae, H. S., Kim, T. G., Whang, C. N., Im, S., Yun, J. S., & Song, J. H. (2002). Electroluminescence mechanism in SiO x layers containing radiative centers. Journal of Applied Physics, 91(7), 4078-4081. https://doi.org/10.1063/1.1452768
Bae, H. S. ; Kim, T. G. ; Whang, C. N. ; Im, S. ; Yun, J. S. ; Song, J. H. / Electroluminescence mechanism in SiO x layers containing radiative centers. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 7. pp. 4078-4081.
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Electroluminescence mechanism in SiO x layers containing radiative centers. / Bae, H. S.; Kim, T. G.; Whang, C. N.; Im, S.; Yun, J. S.; Song, J. H.

In: Journal of Applied Physics, Vol. 91, No. 7, 01.04.2002, p. 4078-4081.

Research output: Contribution to journalArticle

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T1 - Electroluminescence mechanism in SiO x layers containing radiative centers

AU - Bae, H. S.

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AU - Whang, C. N.

AU - Im, S.

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AU - Song, J. H.

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AB - Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich silicon oxides (SRSOs) were fabricated by rf magnetron sputter deposition and Ge-implanted SiO 2 films were fabricated by ion implantation following the thermal oxidation of Si. Blue and violet photoluminescence were observed from the SRSO and the Ge-implanted SiO 2, respectively. However, the electroluminescence (EL) spectra from both oxides exhibited red and near-infrared luminescence bands. Strong EL was observed only under reverse bias conditions on metal-luminescent oxide-semiconductor structures. The EL intensity and peak position were varied with applied voltages. According to the EL and current-voltage measurements, it is concluded that the possible EL mechanism is the impact ionization of ground state electrons in the radiative centers.

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