Electroluminescence mechanism in SiO x layers containing radiative centers

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, J. H. Song

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Abstract

Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich silicon oxides (SRSOs) were fabricated by rf magnetron sputter deposition and Ge-implanted SiO 2 films were fabricated by ion implantation following the thermal oxidation of Si. Blue and violet photoluminescence were observed from the SRSO and the Ge-implanted SiO 2, respectively. However, the electroluminescence (EL) spectra from both oxides exhibited red and near-infrared luminescence bands. Strong EL was observed only under reverse bias conditions on metal-luminescent oxide-semiconductor structures. The EL intensity and peak position were varied with applied voltages. According to the EL and current-voltage measurements, it is concluded that the possible EL mechanism is the impact ionization of ground state electrons in the radiative centers.

Original languageEnglish
Pages (from-to)4078-4081
Number of pages4
JournalJournal of Applied Physics
Volume91
Issue number7
DOIs
Publication statusPublished - 2002 Apr 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Bae, H. S., Kim, T. G., Whang, C. N., Im, S., Yun, J. S., & Song, J. H. (2002). Electroluminescence mechanism in SiO x layers containing radiative centers. Journal of Applied Physics, 91(7), 4078-4081. https://doi.org/10.1063/1.1452768