Electrolyte-Gating Organic Thin Film Transistors

Moon Sung Kang, Jeong Ho Cho, Se Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

This chapter describes the progress in the development of electrolyte-gated Organic thin-film transistors (OTFTs) toward the achievement of low-driving-voltage, flexible, and solution-processable electronics. This discussion begins with a basic explanation of the electrolyte-gated transistor operation mechanism, followed by an introduction of the various electrolyte materials employed in these devices. The electrical properties of electrolyte-gated transistors and their circuit applications are subsequently introduced. Two distinct gating mechanisms can drive the generation of a large current in the semiconducting layer in contact with an electrolyte gate dielectric material: electric double-layer gating or electrochemical gating. Several types of ionic liquid have been employed as gate dielectrics in OTFTs. The characteristics of ionic liquids that benefit the development of high performance OTFTs are frequently accompanied by fluid properties that reduce the practicality of using an ionic liquid in an electronic device.

Original languageEnglish
Title of host publicationLarge Area and Flexible Electronics
Publisherwiley
Pages253-274
Number of pages22
ISBN (Electronic)9783527679973
ISBN (Print)9783527336395
DOIs
Publication statusPublished - 2015 Jan 16

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Materials Science(all)

Cite this

Kang, M. S., Cho, J. H., & Kim, S. H. (2015). Electrolyte-Gating Organic Thin Film Transistors. In Large Area and Flexible Electronics (pp. 253-274). wiley. https://doi.org/10.1002/9783527679973.ch8