This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO2 is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO2 membrane.
|Number of pages||4|
|Publication status||Published - 2004 Dec 1|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 2004 Oct 18 → 2004 Oct 21
|Other||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||04/10/18 → 04/10/21|
All Science Journal Classification (ASJC) codes