Electromagnetic and mechanical analysis for micromachined filter

Xiuping Li, Jong Gwan Yook, Chun Ying Dong, Hong Wang, Choi Look Law, Sheel Aditya

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO2 is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO2 membrane.

Original languageEnglish
Pages1735-1738
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04/10/1804/10/21

Fingerprint

Membranes
Substrates
Silicon
Boundary element method
Insertion losses
Bandpass filters

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Li, X., Yook, J. G., Dong, C. Y., Wang, H., Law, C. L., & Aditya, S. (2004). Electromagnetic and mechanical analysis for micromachined filter. 1735-1738. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.
Li, Xiuping ; Yook, Jong Gwan ; Dong, Chun Ying ; Wang, Hong ; Law, Choi Look ; Aditya, Sheel. / Electromagnetic and mechanical analysis for micromachined filter. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.4 p.
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abstract = "This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO2 is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO2 membrane.",
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Li, X, Yook, JG, Dong, CY, Wang, H, Law, CL & Aditya, S 2004, 'Electromagnetic and mechanical analysis for micromachined filter', Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 04/10/18 - 04/10/21 pp. 1735-1738.

Electromagnetic and mechanical analysis for micromachined filter. / Li, Xiuping; Yook, Jong Gwan; Dong, Chun Ying; Wang, Hong; Law, Choi Look; Aditya, Sheel.

2004. 1735-1738 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conferencePaper

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AB - This paper describes micromachined bandpass filters design at K band on GaAs and silicon substrate, respectively. The performance of three-layer (supported by 2 um AlGaAs membrane) and two-layer (solid) filter structure on GaAs substrate are compared and discussed. Electromagnetic simulation shows less than 1dB insertion loss and acceptable stop band rejection for both the solid two-layer and membrane three-layer filter structure. A two-layer filter structure with cavity on bottom wafer is also proposed on silicon substrate, where a 10 um SiO2 is used as a membrane. Both EM simulation results and mechanical analysis are provided. The boundary element method is used in mechanical simulation and the deflection of about 1.338 um is obtained for SiO2 membrane.

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Li X, Yook JG, Dong CY, Wang H, Law CL, Aditya S. Electromagnetic and mechanical analysis for micromachined filter. 2004. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.