Electromagnetic interference shielding behaviors of Zn-based conducting oxide films prepared by atomic layer deposition

Yong June Choi, Kyung Mun Kang, Hong Sub Lee, Hyung-Ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The structural, electrical, and optical properties of undoped ZnO, F-doped ZnO (ZnO:F), and Al-doped ZnO (ZnO:Al) thin filmswith two different thicknesses deposited by atomic layer deposition (ALD)were investigated to evaluate the electromagnetic interference shielding effectiveness (EMI-SE). A diluted fluoride hydroxide was used as a single reactant source for F doping in a ZnOmatrix, and the F doping concentration was about 1 at.% in the ZnO:F films. The fabrication of the ZnO:Al films was followed by the typical ALD method, and the Al doping concentration of about 2 at.% was adjusted by the dopant deposition intervals of the ZnO:Al2O3 precursor pulse cycle ratios, which were fixed at 19:1. The film thickness variations were controlled with 600 and 1600 total ALD cycles of approximately 100 nmand 300 nm, respectively. The carrier concentration of the films ismonotonically increased in order of the undoped ZnO, ZnO:F, and ZnO:Al films. The EMI-SE values of the undoped ZnO, ZnO:F, and ZnO:Al films at 1 GHz were 0.9 dB, 2.6 dB, and 6.0 dB for ∼100 nm, and were 2.1 dB, 9.7 dB, and 13.1 dB for ∼300 nm, respectively. In our work, the EMI-SE value was increased by the enhancement of both the carrier concentration and film thickness due to reflection via the free carrier scattering effect.

Original languageEnglish
Pages (from-to)226-232
Number of pages7
JournalThin Solid Films
Volume583
Issue number1
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Atomic layer deposition
electromagnetic interference
Signal interference
atomic layer epitaxy
Shielding
Oxide films
shielding
oxide films
conduction
Doping (additives)
Carrier concentration
Film thickness
film thickness
cycles
Fluorides
hydroxides
fluorides
Structural properties
Electric properties
Optical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Electromagnetic interference shielding behaviors of Zn-based conducting oxide films prepared by atomic layer deposition",
abstract = "The structural, electrical, and optical properties of undoped ZnO, F-doped ZnO (ZnO:F), and Al-doped ZnO (ZnO:Al) thin filmswith two different thicknesses deposited by atomic layer deposition (ALD)were investigated to evaluate the electromagnetic interference shielding effectiveness (EMI-SE). A diluted fluoride hydroxide was used as a single reactant source for F doping in a ZnOmatrix, and the F doping concentration was about 1 at.{\%} in the ZnO:F films. The fabrication of the ZnO:Al films was followed by the typical ALD method, and the Al doping concentration of about 2 at.{\%} was adjusted by the dopant deposition intervals of the ZnO:Al2O3 precursor pulse cycle ratios, which were fixed at 19:1. The film thickness variations were controlled with 600 and 1600 total ALD cycles of approximately 100 nmand 300 nm, respectively. The carrier concentration of the films ismonotonically increased in order of the undoped ZnO, ZnO:F, and ZnO:Al films. The EMI-SE values of the undoped ZnO, ZnO:F, and ZnO:Al films at 1 GHz were 0.9 dB, 2.6 dB, and 6.0 dB for ∼100 nm, and were 2.1 dB, 9.7 dB, and 13.1 dB for ∼300 nm, respectively. In our work, the EMI-SE value was increased by the enhancement of both the carrier concentration and film thickness due to reflection via the free carrier scattering effect.",
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Electromagnetic interference shielding behaviors of Zn-based conducting oxide films prepared by atomic layer deposition. / Choi, Yong June; Kang, Kyung Mun; Lee, Hong Sub; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 583, No. 1, 01.01.2015, p. 226-232.

Research output: Contribution to journalArticle

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