The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.
|Number of pages||3|
|Publication status||Published - 2000 May 11|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering