Electromigration of CVD-copper and PVD-copper polycrystalline lines

Seok Kim, Doo Jin Choi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The electromigration (EM) characteristics of chemical vapor deposited (CVD)-Cu films were compared to those of physical vapor deposited (PVD)-Cu films. The CVD-Cu lines showed shorter lifetime than PVD-Cu. The activation energy of EM was 0.754 eV for the CVD-Cu on SiO2, showing the grain boundary diffusion as the EM failure mechanism. The higher the resistivity induced, the higher driving force of EM. The PVD-Cu films had a huge domain structure, which act as a larger grain than CVD-Cu grain that result in the longer life-time and the surface diffusion mechanism with the activation energy of 0.244 eV.

Original languageEnglish
Pages (from-to)281-286
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume516
DOIs
Publication statusPublished - 1998
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 16

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Electromigration of CVD-copper and PVD-copper polycrystalline lines'. Together they form a unique fingerprint.

  • Cite this