Electron and hole mobilities in semimetallic bismuth nanowires

Kiyoung Lee, Seunghyun Lee, S. N. Holmes, Jinhee Ham, Wooyoung Lee, C. H.W. Barnes

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρxx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρxx is used to determine the individual three electron and single hole subband mobilities.

Original languageEnglish
Article number245310
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number24
DOIs
Publication statusPublished - 2010 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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