Electron and hole mobilities in semimetallic bismuth nanowires

Kiyoung Lee, Seunghyun Lee, S. N. Holmes, Jinhee Ham, Wooyoung Lee, C. H.W. Barnes

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρxx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρxx is used to determine the individual three electron and single hole subband mobilities.

Original languageEnglish
Article number245310
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number24
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Bismuth
Hole mobility
Electron mobility
hole mobility
electron mobility
bismuth
Nanowires
nanowires
Fast Fourier transforms
Electrons
Shubnikov-de Haas effect
Fermi surface
Magnetoresistance
Carrier concentration
Orbits
Doping (additives)
Scattering
Magnetic fields
Fabrication
Fermi surfaces

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lee, Kiyoung ; Lee, Seunghyun ; Holmes, S. N. ; Ham, Jinhee ; Lee, Wooyoung ; Barnes, C. H.W. / Electron and hole mobilities in semimetallic bismuth nanowires. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 82, No. 24.
@article{b30e01f3ea104a059cf22b44bb78d33a,
title = "Electron and hole mobilities in semimetallic bismuth nanowires",
abstract = "The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρxx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρxx is used to determine the individual three electron and single hole subband mobilities.",
author = "Kiyoung Lee and Seunghyun Lee and Holmes, {S. N.} and Jinhee Ham and Wooyoung Lee and Barnes, {C. H.W.}",
year = "2010",
month = "12",
day = "1",
doi = "10.1103/PhysRevB.82.245310",
language = "English",
volume = "82",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "24",

}

Electron and hole mobilities in semimetallic bismuth nanowires. / Lee, Kiyoung; Lee, Seunghyun; Holmes, S. N.; Ham, Jinhee; Lee, Wooyoung; Barnes, C. H.W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 24, 245310, 01.12.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron and hole mobilities in semimetallic bismuth nanowires

AU - Lee, Kiyoung

AU - Lee, Seunghyun

AU - Holmes, S. N.

AU - Ham, Jinhee

AU - Lee, Wooyoung

AU - Barnes, C. H.W.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρxx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρxx is used to determine the individual three electron and single hole subband mobilities.

AB - The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform analysis of ρxx into different orbits on an anisotropic Fermi surface. A nonharmonic Shubnikov de Haas oscillation from the hole band is due to variation in the carrier density with applied magnetic field. Electron and hole scattering is dominated by a short-range potential with a hole mobility of 5000 cm2 V⊃-1 s⊃-1 and an electron mobility of 20000 cm2 V⊃-1 s⊃-1 at 1.6 K. Mobility analysis of the fast Fourier transform of ρxx is used to determine the individual three electron and single hole subband mobilities.

UR - http://www.scopus.com/inward/record.url?scp=78651253875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78651253875&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.82.245310

DO - 10.1103/PhysRevB.82.245310

M3 - Article

AN - SCOPUS:78651253875

VL - 82

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 24

M1 - 245310

ER -