Electron-beam assisted growth of hexagonal boron-nitride layer

B. Hwang, J. Kwon, M. Lee, S. J. Lim, S. Jeon, S. Kim, U. Ham, Y. J. Song, Y. Kuk

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Abstract

It has been known that a good quality h-BN layer can only be grown within a narrow temperature window of 1020-1100 K on a copper substrate. We found that the growth temperature window on Cu(111) surface could be lowered up to 100 K by ionizing and/or exciting borazine precursor gas with an electron-beam. The structures of a hexagonal boron nitride (h-BN) layers grown at various substrate temperatures on a Cu(111) were examined using scanning tunneling microscopy. We found that the grown h-BN film exhibits highly inert behavior with wide bandgap semiconductor characteristics.

Original languageEnglish
Pages (from-to)1365-1369
Number of pages5
JournalCurrent Applied Physics
Volume13
Issue number7
DOIs
Publication statusPublished - 2013 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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    Hwang, B., Kwon, J., Lee, M., Lim, S. J., Jeon, S., Kim, S., Ham, U., Song, Y. J., & Kuk, Y. (2013). Electron-beam assisted growth of hexagonal boron-nitride layer. Current Applied Physics, 13(7), 1365-1369. https://doi.org/10.1016/j.cap.2013.04.018