Electron-beam assisted growth of hexagonal boron-nitride layer

B. Hwang, J. Kwon, M. Lee, S. J. Lim, S. Jeon, S. Kim, U. Ham, Y. J. Song, Y. Kuk

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

It has been known that a good quality h-BN layer can only be grown within a narrow temperature window of 1020-1100 K on a copper substrate. We found that the growth temperature window on Cu(111) surface could be lowered up to 100 K by ionizing and/or exciting borazine precursor gas with an electron-beam. The structures of a hexagonal boron nitride (h-BN) layers grown at various substrate temperatures on a Cu(111) were examined using scanning tunneling microscopy. We found that the grown h-BN film exhibits highly inert behavior with wide bandgap semiconductor characteristics.

Original languageEnglish
Pages (from-to)1365-1369
Number of pages5
JournalCurrent Applied Physics
Volume13
Issue number7
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Boron nitride
boron nitrides
Electron beams
electron beams
Growth temperature
Scanning tunneling microscopy
Substrates
temperature
scanning tunneling microscopy
Copper
Energy gap
Gases
Semiconductor materials
copper
Temperature
gases
boron nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Hwang, B., Kwon, J., Lee, M., Lim, S. J., Jeon, S., Kim, S., ... Kuk, Y. (2013). Electron-beam assisted growth of hexagonal boron-nitride layer. Current Applied Physics, 13(7), 1365-1369. https://doi.org/10.1016/j.cap.2013.04.018
Hwang, B. ; Kwon, J. ; Lee, M. ; Lim, S. J. ; Jeon, S. ; Kim, S. ; Ham, U. ; Song, Y. J. ; Kuk, Y. / Electron-beam assisted growth of hexagonal boron-nitride layer. In: Current Applied Physics. 2013 ; Vol. 13, No. 7. pp. 1365-1369.
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Hwang, B, Kwon, J, Lee, M, Lim, SJ, Jeon, S, Kim, S, Ham, U, Song, YJ & Kuk, Y 2013, 'Electron-beam assisted growth of hexagonal boron-nitride layer', Current Applied Physics, vol. 13, no. 7, pp. 1365-1369. https://doi.org/10.1016/j.cap.2013.04.018

Electron-beam assisted growth of hexagonal boron-nitride layer. / Hwang, B.; Kwon, J.; Lee, M.; Lim, S. J.; Jeon, S.; Kim, S.; Ham, U.; Song, Y. J.; Kuk, Y.

In: Current Applied Physics, Vol. 13, No. 7, 01.01.2013, p. 1365-1369.

Research output: Contribution to journalArticle

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AU - Hwang, B.

AU - Kwon, J.

AU - Lee, M.

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AU - Kim, S.

AU - Ham, U.

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AB - It has been known that a good quality h-BN layer can only be grown within a narrow temperature window of 1020-1100 K on a copper substrate. We found that the growth temperature window on Cu(111) surface could be lowered up to 100 K by ionizing and/or exciting borazine precursor gas with an electron-beam. The structures of a hexagonal boron nitride (h-BN) layers grown at various substrate temperatures on a Cu(111) were examined using scanning tunneling microscopy. We found that the grown h-BN film exhibits highly inert behavior with wide bandgap semiconductor characteristics.

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