Interfacial conductivity at the interface between two insulating oxides, that is 2DEG, shows a number of intriguing properties and applications, such as on/off switching with external electric fields, use in nanoscale electronic devices and tunable conductivity. Here, we report the effect of the interfacial conductivity on the kinetic behavior of electron-beam-induced epitaxial crystallization of an oxide amorphous thin film on an SrTiO3 substrate. Epitaxial growth from the interface can occur without direct e-beam irradiation at the interface due to accumulated charge around the beam position in the insulating materials. 2DEG, which acts as a current path delays the crystallization kinetics, thus delicate control of the crystallized pattern shape and size is available. As a result, successful pattern writing with a width of about 5 nm was performed. The present work provides useful guidelines for coherent atomic scale e-beam patterning considering the critical distance of the electron beam from the interface for the epitaxial growth, e-beam dose rate effect on the growth rate and the heterostructure interfacial conductivity.
Bibliographical noteFunding Information:
The authors thank Young Woo Jeong and Min-kyung Cho at Advanced Analysis Center, KIST for important contributions in TEM sampling and STEM observation, respectively. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and future Planning (2017R1A2B2012514) and the KIST Institutional Program (2V05210).
© 2017 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)