ZnO thin films were deposited on crystalline Si (c-Si) solar cells as an electron transport and anti-reflection layer using a sol-gel spin-coating method. ZnO films exhibited optical transmittance in the visible region greater than 90%. When Ga was doped into the ZnO film, the electrical resistivity decreased with increasing carrier concentration. The solar cell efficiency improved with the addition of a Ga-doped ZnO thin film because of an increased current density (Jsc) fill factor (FF). Electron beam treatment decreased resistivity by increasing carrier concentration and mobility. Introduction of an electron beam onto the ZnO anti-reflection layer-coated c-Si solar cell increased the cell efficiency due to increases in Jsc and FF. The c-Si solar cell passivated by Ga doping and electron beam treatment revealed a 1.23% improvement in cell efficiency, resulting in a final 11.6% cell efficiency.
Bibliographical notePublisher Copyright:
© 2015 by American Scientific Publishers.
All Science Journal Classification (ASJC) codes
- Materials Science(all)