Electron beam-treated ZnO thin film as an anti-reflection layer for crystalline Si solar cells

Solbaro Kim, Changheon Kim, Jinhoon Lee, Jihoon Na, Chaehwan Jeong, Sangwoo Lim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

ZnO thin films were deposited on crystalline Si (c-Si) solar cells as an electron transport and anti-reflection layer using a sol-gel spin-coating method. ZnO films exhibited optical transmittance in the visible region greater than 90%. When Ga was doped into the ZnO film, the electrical resistivity decreased with increasing carrier concentration. The solar cell efficiency improved with the addition of a Ga-doped ZnO thin film because of an increased current density (Jsc) fill factor (FF). Electron beam treatment decreased resistivity by increasing carrier concentration and mobility. Introduction of an electron beam onto the ZnO anti-reflection layer-coated c-Si solar cell increased the cell efficiency due to increases in Jsc and FF. The c-Si solar cell passivated by Ga doping and electron beam treatment revealed a 1.23% improvement in cell efficiency, resulting in a final 11.6% cell efficiency.

Original languageEnglish
Pages (from-to)1665-1671
Number of pages7
JournalScience of Advanced Materials
Volume7
Issue number8
DOIs
Publication statusPublished - 2015 Jan 1

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Electron beams
Solar cells
Crystalline materials
Thin films
Carrier concentration
Carrier mobility
Opacity
Spin coating
Sol-gels
Current density
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kim, Solbaro ; Kim, Changheon ; Lee, Jinhoon ; Na, Jihoon ; Jeong, Chaehwan ; Lim, Sangwoo. / Electron beam-treated ZnO thin film as an anti-reflection layer for crystalline Si solar cells. In: Science of Advanced Materials. 2015 ; Vol. 7, No. 8. pp. 1665-1671.
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abstract = "ZnO thin films were deposited on crystalline Si (c-Si) solar cells as an electron transport and anti-reflection layer using a sol-gel spin-coating method. ZnO films exhibited optical transmittance in the visible region greater than 90{\%}. When Ga was doped into the ZnO film, the electrical resistivity decreased with increasing carrier concentration. The solar cell efficiency improved with the addition of a Ga-doped ZnO thin film because of an increased current density (Jsc) fill factor (FF). Electron beam treatment decreased resistivity by increasing carrier concentration and mobility. Introduction of an electron beam onto the ZnO anti-reflection layer-coated c-Si solar cell increased the cell efficiency due to increases in Jsc and FF. The c-Si solar cell passivated by Ga doping and electron beam treatment revealed a 1.23{\%} improvement in cell efficiency, resulting in a final 11.6{\%} cell efficiency.",
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Electron beam-treated ZnO thin film as an anti-reflection layer for crystalline Si solar cells. / Kim, Solbaro; Kim, Changheon; Lee, Jinhoon; Na, Jihoon; Jeong, Chaehwan; Lim, Sangwoo.

In: Science of Advanced Materials, Vol. 7, No. 8, 01.01.2015, p. 1665-1671.

Research output: Contribution to journalArticle

TY - JOUR

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