Antireflection (AR) layer coated semiconductor laser diodes may have many applications, particularly as external cavity diodes tor optical memory heads. The electron cyclotron resonance (ECR) sputtering system was used for preparing AR coatings which consist of both SiO2 and Si3N4 phases. The refractive index and the thickness of the AR coatings were adjusted by controlling numerous deposition parameters, including the relative flow ratio of O2 and N2 gas flow, the total gas flow rate, the RF and ECR power, and the deposition time. AR coated AlGaAs laser diodes do not show a sharp threshold in the light output-current characteristic curve and have good potential for application in the lensless optical floppy systems.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 SUPPL. B|
|Publication status||Published - 1998 Apr|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)