Electron-doped Sr2IrO4: An analogue of hole-doped cuprate superconductors demonstrated by scanning tunneling microscopy

Y. J. Yan, M. Q. Ren, H. C. Xu, B. P. Xie, R. Tao, H. Y. Choi, N. Lee, Y. J. Choi, T. Zhang, D. L. Feng

Research output: Contribution to journalArticle

98 Citations (Scopus)

Abstract

Sr2IrO4 was predicted to be a high-temperature superconductor upon electron doping since it highly resembles the cuprates in crystal structure, electronic structure, and magnetic coupling constants. Here, we report a scanning tunneling microscopy/spectroscopy (STM/STS) study of Sr2IrO4 with surface electron doping by depositing potassium (K) atoms. We find that as the electron doping increases, the system gradually evolves from an insulating state to a normal metallic state, via a pseudogaplike phase, and a phase with a sharp, V-shaped low-energy gap with about 95% loss of density of state (DOS) at EF. At certain K coverage (0.5-0.6 monolayer), the magnitude of the low-energy gap is 25-30 meV, and it closes at around 50 K. Our observations show that the electron-doped Sr2IrO4 remarkably resembles hole-doped cuprate superconductors.

Original languageEnglish
Article number041018
JournalPhysical Review X
Volume5
Issue number4
DOIs
Publication statusPublished - 2015 Jan 1

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cuprates
scanning tunneling microscopy
analogs
electrons
high temperature superconductors
potassium
electronic structure
crystal structure
spectroscopy
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yan, Y. J. ; Ren, M. Q. ; Xu, H. C. ; Xie, B. P. ; Tao, R. ; Choi, H. Y. ; Lee, N. ; Choi, Y. J. ; Zhang, T. ; Feng, D. L. / Electron-doped Sr2IrO4 : An analogue of hole-doped cuprate superconductors demonstrated by scanning tunneling microscopy. In: Physical Review X. 2015 ; Vol. 5, No. 4.
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Electron-doped Sr2IrO4 : An analogue of hole-doped cuprate superconductors demonstrated by scanning tunneling microscopy. / Yan, Y. J.; Ren, M. Q.; Xu, H. C.; Xie, B. P.; Tao, R.; Choi, H. Y.; Lee, N.; Choi, Y. J.; Zhang, T.; Feng, D. L.

In: Physical Review X, Vol. 5, No. 4, 041018, 01.01.2015.

Research output: Contribution to journalArticle

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AU - Yan, Y. J.

AU - Ren, M. Q.

AU - Xu, H. C.

AU - Xie, B. P.

AU - Tao, R.

AU - Choi, H. Y.

AU - Lee, N.

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AU - Zhang, T.

AU - Feng, D. L.

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