Electron dynamics in n-doped in0.4Ga0.6As/GaAs quantum dot infrared detector structures

Z. K. Wu, H. Choi, T. B. Norris, S. Chakrabarti, X. H. Su, P. Bhattacharya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy directly reveals electron dynamics in n-doped quantum dots infrared detector structure. Capturing and intradot relaxation time were measured. Nanosecond-scale dynamics in the n=1 state was also observed.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
Publication statusPublished - 2006
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 26

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Other

OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
CountryUnited States
CityLong Beach, CA
Period06/5/2106/5/26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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    Wu, Z. K., Choi, H., Norris, T. B., Chakrabarti, S., Su, X. H., & Bhattacharya, P. (2006). Electron dynamics in n-doped in0.4Ga0.6As/GaAs quantum dot infrared detector structures. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 [4629131] (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4629131