Electron dynamics in n-doped In0.4Ga0.6As/GaAs quantum dot infrared detector structures

Z. K. Wu, Hyunyong Choi, T. B. Norris, S. Chakrabarti, X. H. Su, P. Bhattacharya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy directly reveals electron dynamics in n-doped quantum dots infrared detector structure. Capturing and intradot relaxation time were measured. Nanosecond-scale dynamics in the n=1 state was also observed.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
Publication statusPublished - 2006 Jan 1
EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 21

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2006
CountryUnited States
CityLong Beach, CA
Period06/5/2106/5/21

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Wu, Z. K., Choi, H., Norris, T. B., Chakrabarti, S., Su, X. H., & Bhattacharya, P. (2006). Electron dynamics in n-doped In0.4Ga0.6As/GaAs quantum dot infrared detector structures. In Quantum Electronics and Laser Science Conference, QELS 2006 Optical Society of America.