Electron dynamics in n-doped In0.4Ga0.6As/GaAs quantum dot infrared detector structures

Z. K. Wu, H. Choi, T. B. Norris, S. Chakrabarti, X. H. Su, P. Bhattacharya

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy directly reveals electron dynamics in n-doped quantum dots infrared detector structure. Capturing and intradot relaxation time were measured. Nanosecond-scale dynamics in the n=1 state was also observed.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
Publication statusPublished - 2006
EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 21

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701


OtherQuantum Electronics and Laser Science Conference, QELS 2006
Country/TerritoryUnited States
CityLong Beach, CA

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'Electron dynamics in n-doped In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs quantum dot infrared detector structures'. Together they form a unique fingerprint.

Cite this