Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

Y. S. Park, C. M. Park, C. J. Park, H. Y. Cho, Seung Joo Lee, T. W. Kang, S. H. Lee, Jae Eung Oh, Kyung Hwa Yoo, Min Soo Son

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Abstract

We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.

Original languageEnglish
Article number192104
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
Publication statusPublished - 2006 May 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Park, Y. S., Park, C. M., Park, C. J., Cho, H. Y., Lee, S. J., Kang, T. W., Lee, S. H., Oh, J. E., Yoo, K. H., & Son, M. S. (2006). Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy. Applied Physics Letters, 88(19), [192104]. https://doi.org/10.1063/1.2203735