Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

Y. S. Park, C. M. Park, C. J. Park, H. Y. Cho, Seung Joo Lee, T. W. Kang, S. H. Lee, Jae Eung Oh, Kyung-hwa Yoo, Min Soo Son

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.

Original languageEnglish
Article number192104
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
Publication statusPublished - 2006 May 23

Fingerprint

p-n junctions
nanorods
molecular beam epitaxy
traps
electrons
junction diodes
thermionic emission
cathodoluminescence
absorption cross sections
electrical measurement
conduction bands
depletion
lithography
electrical properties
temperature dependence
electric potential
curves
spectroscopy
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, Y. S., Park, C. M., Park, C. J., Cho, H. Y., Lee, S. J., Kang, T. W., ... Son, M. S. (2006). Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy. Applied Physics Letters, 88(19), [192104]. https://doi.org/10.1063/1.2203735
Park, Y. S. ; Park, C. M. ; Park, C. J. ; Cho, H. Y. ; Lee, Seung Joo ; Kang, T. W. ; Lee, S. H. ; Oh, Jae Eung ; Yoo, Kyung-hwa ; Son, Min Soo. / Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy. In: Applied Physics Letters. 2006 ; Vol. 88, No. 19.
@article{f8c895d9f5d04a1c807792b54a99ce68,
title = "Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy",
abstract = "We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.",
author = "Park, {Y. S.} and Park, {C. M.} and Park, {C. J.} and Cho, {H. Y.} and Lee, {Seung Joo} and Kang, {T. W.} and Lee, {S. H.} and Oh, {Jae Eung} and Kyung-hwa Yoo and Son, {Min Soo}",
year = "2006",
month = "5",
day = "23",
doi = "10.1063/1.2203735",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

Park, YS, Park, CM, Park, CJ, Cho, HY, Lee, SJ, Kang, TW, Lee, SH, Oh, JE, Yoo, K & Son, MS 2006, 'Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy', Applied Physics Letters, vol. 88, no. 19, 192104. https://doi.org/10.1063/1.2203735

Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy. / Park, Y. S.; Park, C. M.; Park, C. J.; Cho, H. Y.; Lee, Seung Joo; Kang, T. W.; Lee, S. H.; Oh, Jae Eung; Yoo, Kyung-hwa; Son, Min Soo.

In: Applied Physics Letters, Vol. 88, No. 19, 192104, 23.05.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

AU - Park, Y. S.

AU - Park, C. M.

AU - Park, C. J.

AU - Cho, H. Y.

AU - Lee, Seung Joo

AU - Kang, T. W.

AU - Lee, S. H.

AU - Oh, Jae Eung

AU - Yoo, Kyung-hwa

AU - Son, Min Soo

PY - 2006/5/23

Y1 - 2006/5/23

N2 - We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.

AB - We have studied the electrical properties of a GaN nanorod p-n junction diode by deep level transient spectroscopy measurements. The p-n junction nanorods were patterned on a Si O2 substrate by using e-beam lithography. In order to confirm the formation of p-n junction, cathodoluminescence and current-voltage measurements, as a function of temperature, were made. The current-voltage curve exhibits strong temperature dependence, suggesting that thermionic emission over a barrier dominates. This barrier most likely corresponds to emission from a deep level in the band. The deep level appears to be an electron trap at Ec-0.40 eV below the conduction band with a capture cross section of 2.22×10 cm2 near the depletion region of the p-n junction.

UR - http://www.scopus.com/inward/record.url?scp=33646700252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646700252&partnerID=8YFLogxK

U2 - 10.1063/1.2203735

DO - 10.1063/1.2203735

M3 - Article

AN - SCOPUS:33646700252

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 192104

ER -