Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

Gwan Hyoung Lee, Young Jun Yu, Changgu Lee, Cory Dean, Kenneth L. Shepard, Philip Kim, James Hone

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Abstract

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO 2.

Original languageEnglish
Article number243114
JournalApplied Physics Letters
Volume99
Issue number24
DOIs
Publication statusPublished - 2011 Dec 12

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, G. H., Yu, Y. J., Lee, C., Dean, C., Shepard, K. L., Kim, P., & Hone, J. (2011). Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Applied Physics Letters, 99(24), [243114]. https://doi.org/10.1063/1.3662043