Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

Gwan Hyoung Lee, Young Jun Yu, Changgu Lee, Cory Dean, Kenneth L. Shepard, Philip Kim, James Hone

Research output: Contribution to journalArticle

267 Citations (Scopus)

Abstract

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO 2.

Original languageEnglish
Article number243114
JournalApplied Physics Letters
Volume99
Issue number24
DOIs
Publication statusPublished - 2011 Dec 12

Fingerprint

boron nitrides
electron tunneling
mica
electrical faults
atomic force microscopy
gold

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, G. H., Yu, Y. J., Lee, C., Dean, C., Shepard, K. L., Kim, P., & Hone, J. (2011). Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Applied Physics Letters, 99(24), [243114]. https://doi.org/10.1063/1.3662043
Lee, Gwan Hyoung ; Yu, Young Jun ; Lee, Changgu ; Dean, Cory ; Shepard, Kenneth L. ; Kim, Philip ; Hone, James. / Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. In: Applied Physics Letters. 2011 ; Vol. 99, No. 24.
@article{d3f0f995ce9c42b4b60fa2fd8154f68b,
title = "Electron tunneling through atomically flat and ultrathin hexagonal boron nitride",
abstract = "Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO 2.",
author = "Lee, {Gwan Hyoung} and Yu, {Young Jun} and Changgu Lee and Cory Dean and Shepard, {Kenneth L.} and Philip Kim and James Hone",
year = "2011",
month = "12",
day = "12",
doi = "10.1063/1.3662043",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

Lee, GH, Yu, YJ, Lee, C, Dean, C, Shepard, KL, Kim, P & Hone, J 2011, 'Electron tunneling through atomically flat and ultrathin hexagonal boron nitride', Applied Physics Letters, vol. 99, no. 24, 243114. https://doi.org/10.1063/1.3662043

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. / Lee, Gwan Hyoung; Yu, Young Jun; Lee, Changgu; Dean, Cory; Shepard, Kenneth L.; Kim, Philip; Hone, James.

In: Applied Physics Letters, Vol. 99, No. 24, 243114, 12.12.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

AU - Lee, Gwan Hyoung

AU - Yu, Young Jun

AU - Lee, Changgu

AU - Dean, Cory

AU - Shepard, Kenneth L.

AU - Kim, Philip

AU - Hone, James

PY - 2011/12/12

Y1 - 2011/12/12

N2 - Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO 2.

AB - Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO 2.

UR - http://www.scopus.com/inward/record.url?scp=83755178686&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83755178686&partnerID=8YFLogxK

U2 - 10.1063/1.3662043

DO - 10.1063/1.3662043

M3 - Article

AN - SCOPUS:83755178686

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 243114

ER -