Electronic and optical properties of single crystal SnS2

An earth-abundant disulfide photocatalyst

Lee A. Burton, Thomas J. Whittles, David Hesp, Wojciech M. Linhart, Jonathan M. Skelton, Bo Hou, Richard F. Webster, Graeme O'Dowd, Christian Reece, David Cherns, David J. Fermin, Tim D. Veal, Vin R. Dhanak, Aron Walsh

Research output: Contribution to journalArticle

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Abstract

Tin disulfide is attractive as a potential visible-light photocatalyst because its elemental components are cheap, abundant and environmentally benign. As a 2-dimensional semiconductor, SnS2 can undergo exfoliation to form atomic layer sheets that provide high surface areas of photoactive material. In order to facilitate the deployment of this exciting material in industrial processes and electrolytic cells, single crystals of phase pure SnS2 are synthesised and analysed with modern spectroscopic techniques to ascertain the values of relevant semiconductor properties. An electron affinity of 4.16 eV, ionisation potential of 6.44 eV and work function of 4.81 eV are found. The temperature dependent band gap is also reported for this material for the first time. We confirm the valence band is formed predominately by a mixture S 3p and Sn 5s, while the conduction band consists of a mixture of Sn 5s and 5p orbitals and comment on the agreement between experiment and theory for values of band gaps.

Original languageEnglish
Pages (from-to)1312-1318
Number of pages7
JournalJournal of Materials Chemistry A
Volume4
Issue number4
DOIs
Publication statusPublished - 2016 Jan 1

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Photocatalysts
Disulfides
Electronic properties
Optical properties
Earth (planet)
Single crystals
Energy gap
Semiconductor materials
Electrolytic cells
Electron affinity
Tin
Ionization potential
Valence bands
Conduction bands
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Burton, Lee A. ; Whittles, Thomas J. ; Hesp, David ; Linhart, Wojciech M. ; Skelton, Jonathan M. ; Hou, Bo ; Webster, Richard F. ; O'Dowd, Graeme ; Reece, Christian ; Cherns, David ; Fermin, David J. ; Veal, Tim D. ; Dhanak, Vin R. ; Walsh, Aron. / Electronic and optical properties of single crystal SnS2 : An earth-abundant disulfide photocatalyst. In: Journal of Materials Chemistry A. 2016 ; Vol. 4, No. 4. pp. 1312-1318.
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Burton, LA, Whittles, TJ, Hesp, D, Linhart, WM, Skelton, JM, Hou, B, Webster, RF, O'Dowd, G, Reece, C, Cherns, D, Fermin, DJ, Veal, TD, Dhanak, VR & Walsh, A 2016, 'Electronic and optical properties of single crystal SnS2: An earth-abundant disulfide photocatalyst', Journal of Materials Chemistry A, vol. 4, no. 4, pp. 1312-1318. https://doi.org/10.1039/c5ta08214e

Electronic and optical properties of single crystal SnS2 : An earth-abundant disulfide photocatalyst. / Burton, Lee A.; Whittles, Thomas J.; Hesp, David; Linhart, Wojciech M.; Skelton, Jonathan M.; Hou, Bo; Webster, Richard F.; O'Dowd, Graeme; Reece, Christian; Cherns, David; Fermin, David J.; Veal, Tim D.; Dhanak, Vin R.; Walsh, Aron.

In: Journal of Materials Chemistry A, Vol. 4, No. 4, 01.01.2016, p. 1312-1318.

Research output: Contribution to journalArticle

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T1 - Electronic and optical properties of single crystal SnS2

T2 - An earth-abundant disulfide photocatalyst

AU - Burton, Lee A.

AU - Whittles, Thomas J.

AU - Hesp, David

AU - Linhart, Wojciech M.

AU - Skelton, Jonathan M.

AU - Hou, Bo

AU - Webster, Richard F.

AU - O'Dowd, Graeme

AU - Reece, Christian

AU - Cherns, David

AU - Fermin, David J.

AU - Veal, Tim D.

AU - Dhanak, Vin R.

AU - Walsh, Aron

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Tin disulfide is attractive as a potential visible-light photocatalyst because its elemental components are cheap, abundant and environmentally benign. As a 2-dimensional semiconductor, SnS2 can undergo exfoliation to form atomic layer sheets that provide high surface areas of photoactive material. In order to facilitate the deployment of this exciting material in industrial processes and electrolytic cells, single crystals of phase pure SnS2 are synthesised and analysed with modern spectroscopic techniques to ascertain the values of relevant semiconductor properties. An electron affinity of 4.16 eV, ionisation potential of 6.44 eV and work function of 4.81 eV are found. The temperature dependent band gap is also reported for this material for the first time. We confirm the valence band is formed predominately by a mixture S 3p and Sn 5s, while the conduction band consists of a mixture of Sn 5s and 5p orbitals and comment on the agreement between experiment and theory for values of band gaps.

AB - Tin disulfide is attractive as a potential visible-light photocatalyst because its elemental components are cheap, abundant and environmentally benign. As a 2-dimensional semiconductor, SnS2 can undergo exfoliation to form atomic layer sheets that provide high surface areas of photoactive material. In order to facilitate the deployment of this exciting material in industrial processes and electrolytic cells, single crystals of phase pure SnS2 are synthesised and analysed with modern spectroscopic techniques to ascertain the values of relevant semiconductor properties. An electron affinity of 4.16 eV, ionisation potential of 6.44 eV and work function of 4.81 eV are found. The temperature dependent band gap is also reported for this material for the first time. We confirm the valence band is formed predominately by a mixture S 3p and Sn 5s, while the conduction band consists of a mixture of Sn 5s and 5p orbitals and comment on the agreement between experiment and theory for values of band gaps.

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