Electronic and structural characteristics of Zr-incorporated Gd 2 O 3 films on strained SiGe substrates

J. H. Baeck, S. A. Park, W. J. Lee, I. S. Jeong, KwangHo Jeong, Mann-Ho Cho, Y. K. Kim, B. G. Min, Dae Hong Ko

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Abstract

Zr-incorporated Gd 2 O 3 films were grown on various substrates as a function of Zr content. The extent of interfacial reactions was found to be critically dependent on both the incorporated Zr content and the substrate type. Specifically, the silicide layer was suppressed and the Gd 2 O 3 phase was changed to ZrO 2 on a Si substrate with increasing Zr content. Crystalline Gd2 Ge 2 O 7 was grown on a Ge substrate, as the result of interfacial reactions between Gd-oxide and the Ge substrate. However, interfacial reactions were not affected by the amount of Zr incorporated. On the SiGe/Si substrate, reactions between Gd-oxide and Si could be controlled effectively by the incorporation of Zr, while the extent of reactions with Ge was significantly enhanced as the Zr content increased. The formation of an interfacial layer between the film and the SiGe substrate resulted in a textured crystalline growth.

Original languageEnglish
Article number204510
JournalJournal of Chemical Physics
Volume130
Issue number20
DOIs
Publication statusPublished - 2009 Jun 15

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Substrates
electronics
Surface chemistry
Oxides
Crystalline materials
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

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title = "Electronic and structural characteristics of Zr-incorporated Gd 2 O 3 films on strained SiGe substrates",
abstract = "Zr-incorporated Gd 2 O 3 films were grown on various substrates as a function of Zr content. The extent of interfacial reactions was found to be critically dependent on both the incorporated Zr content and the substrate type. Specifically, the silicide layer was suppressed and the Gd 2 O 3 phase was changed to ZrO 2 on a Si substrate with increasing Zr content. Crystalline Gd2 Ge 2 O 7 was grown on a Ge substrate, as the result of interfacial reactions between Gd-oxide and the Ge substrate. However, interfacial reactions were not affected by the amount of Zr incorporated. On the SiGe/Si substrate, reactions between Gd-oxide and Si could be controlled effectively by the incorporation of Zr, while the extent of reactions with Ge was significantly enhanced as the Zr content increased. The formation of an interfacial layer between the film and the SiGe substrate resulted in a textured crystalline growth.",
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Electronic and structural characteristics of Zr-incorporated Gd 2 O 3 films on strained SiGe substrates . / Baeck, J. H.; Park, S. A.; Lee, W. J.; Jeong, I. S.; Jeong, KwangHo; Cho, Mann-Ho; Kim, Y. K.; Min, B. G.; Ko, Dae Hong.

In: Journal of Chemical Physics, Vol. 130, No. 20, 204510, 15.06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic and structural characteristics of Zr-incorporated Gd 2 O 3 films on strained SiGe substrates

AU - Baeck, J. H.

AU - Park, S. A.

AU - Lee, W. J.

AU - Jeong, I. S.

AU - Jeong, KwangHo

AU - Cho, Mann-Ho

AU - Kim, Y. K.

AU - Min, B. G.

AU - Ko, Dae Hong

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AB - Zr-incorporated Gd 2 O 3 films were grown on various substrates as a function of Zr content. The extent of interfacial reactions was found to be critically dependent on both the incorporated Zr content and the substrate type. Specifically, the silicide layer was suppressed and the Gd 2 O 3 phase was changed to ZrO 2 on a Si substrate with increasing Zr content. Crystalline Gd2 Ge 2 O 7 was grown on a Ge substrate, as the result of interfacial reactions between Gd-oxide and the Ge substrate. However, interfacial reactions were not affected by the amount of Zr incorporated. On the SiGe/Si substrate, reactions between Gd-oxide and Si could be controlled effectively by the incorporation of Zr, while the extent of reactions with Ge was significantly enhanced as the Zr content increased. The formation of an interfacial layer between the film and the SiGe substrate resulted in a textured crystalline growth.

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