Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe4)2I

C. Tournier-Colletta, L. Moreschini, G. Autès, S. Moser, A. Crepaldi, H. Berger, A. L. Walter, K. S. Kim, A. Bostwick, P. Monceau, E. Rotenberg, O. V. Yazyev, M. Grioni

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19 Citations (Scopus)


We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW.

Original languageEnglish
Article number236401
JournalPhysical review letters
Issue number23
Publication statusPublished - 2013 Jun 4

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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