TY - JOUR
T1 - Electronic instability in a zero-gap semiconductor
T2 - The charge-density wave in (TaSe4)2I
AU - Tournier-Colletta, C.
AU - Moreschini, L.
AU - Autès, G.
AU - Moser, S.
AU - Crepaldi, A.
AU - Berger, H.
AU - Walter, A. L.
AU - Kim, K. S.
AU - Bostwick, A.
AU - Monceau, P.
AU - Rotenberg, E.
AU - Yazyev, O. V.
AU - Grioni, M.
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013/6/4
Y1 - 2013/6/4
N2 - We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW.
AB - We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW.
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U2 - 10.1103/PhysRevLett.110.236401
DO - 10.1103/PhysRevLett.110.236401
M3 - Article
AN - SCOPUS:84878706855
VL - 110
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 23
M1 - 236401
ER -