Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe4)2I

C. Tournier-Colletta, L. Moreschini, G. Autès, S. Moser, A. Crepaldi, H. Berger, A. L. Walter, K. S. Kim, A. Bostwick, P. Monceau, E. Rotenberg, O. V. Yazyev, M. Grioni

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Abstract

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW.

Original languageEnglish
Article number236401
JournalPhysical Review Letters
Volume110
Issue number23
DOIs
Publication statusPublished - 2013 Jun 4

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Tournier-Colletta, C., Moreschini, L., Autès, G., Moser, S., Crepaldi, A., Berger, H., Walter, A. L., Kim, K. S., Bostwick, A., Monceau, P., Rotenberg, E., Yazyev, O. V., & Grioni, M. (2013). Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe4)2I. Physical Review Letters, 110(23), [236401]. https://doi.org/10.1103/PhysRevLett.110.236401