Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe4)2I

C. Tournier-Colletta; L. Moreschini; G. Autès; S. Moser; A. Crepaldi; H. Berger; A. L. Walter; K. S. Kim; A. Bostwick; P. Monceau; E. Rotenberg; O. V. Yazyev; M. Grioni

doi:10.1103/PhysRevLett.110.236401

Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe₄)₂I

C. Tournier-Colletta, L. Moreschini, G. Autès, S. Moser, A. Crepaldi, H. Berger, A. L. Walter, K. S. Kim, A. Bostwick, P. Monceau, E. Rotenberg, O. V. Yazyev, M. Grioni

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe₄)₂I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T_CDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at T_CDW.

Original language	English
Article number	236401
Journal	Physical review letters
Volume	110
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.110.236401
Publication status	Published - 2013 Jun 4

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1103/PhysRevLett.110.236401

Fingerprint Dive into the research topics of 'Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe<sub>4</sub>)<sub>2</sub>I'. Together they form a unique fingerprint.

Cite this

Tournier-Colletta, C., Moreschini, L., Autès, G., Moser, S., Crepaldi, A., Berger, H., Walter, A. L., Kim, K. S., Bostwick, A., Monceau, P., Rotenberg, E., Yazyev, O. V., & Grioni, M. (2013). Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe₄)₂I. Physical review letters, 110(23), [236401]. https://doi.org/10.1103/PhysRevLett.110.236401

@article{2fbfd39476e945d0b556df5158df0cf4,

title = "Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe4)2I",

abstract = "We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW.",

author = "C. Tournier-Colletta and L. Moreschini and G. Aut{\`e}s and S. Moser and A. Crepaldi and H. Berger and Walter, {A. L.} and Kim, {K. S.} and A. Bostwick and P. Monceau and E. Rotenberg and Yazyev, {O. V.} and M. Grioni",

year = "2013",

month = jun,

day = "4",

doi = "10.1103/PhysRevLett.110.236401",

language = "English",

volume = "110",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "23",

}

Electronic instability in a zero-gap semiconductor : The charge-density wave in (TaSe₄)₂I. / Tournier-Colletta, C.; Moreschini, L.; Autès, G.; Moser, S.; Crepaldi, A.; Berger, H.; Walter, A. L.; Kim, K. S.; Bostwick, A.; Monceau, P.; Rotenberg, E.; Yazyev, O. V.; Grioni, M.

In: Physical review letters, Vol. 110, No. 23, 236401, 04.06.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electronic instability in a zero-gap semiconductor

T2 - The charge-density wave in (TaSe4)2I

AU - Tournier-Colletta, C.

AU - Moreschini, L.

AU - Autès, G.

AU - Moser, S.

AU - Crepaldi, A.

AU - Berger, H.

AU - Walter, A. L.

AU - Kim, K. S.

AU - Bostwick, A.

AU - Monceau, P.

AU - Rotenberg, E.

AU - Yazyev, O. V.

AU - Grioni, M.

PY - 2013/6/4

Y1 - 2013/6/4

N2 - We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW.

AB - We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW.

UR - http://www.scopus.com/inward/record.url?scp=84878706855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878706855&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.110.236401

DO - 10.1103/PhysRevLett.110.236401

M3 - Article

AN - SCOPUS:84878706855

VL - 110

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 23

M1 - 236401

ER -