Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma

M. H. Cho, K. B. Chung, D. W. Moon

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=30%, 55%, and 70%), prepared using a direct N plasma treatment, were investigated. N 1s spectra of nitrided Hf silicate films indicate that complex chemical states are generated. In particular, energy states with a high binding energy are stable, even after a postnitridation annealing. The quantity of N incorporated into the film is not dependent on the mole fraction of Hf O2 in the film, while the thermal stability of the N in the film is significantly influenced by the fraction of Hf O2 present. The thermal stability of the N in the film critically affects the composition and thickness of the film: i.e., after the postnitridation annealing, the thickness of the silicate film and the quantity of Hf and N are decreased, as the result of the dissociation of unstable Hf-N bonds.

Original languageEnglish
Article number182908
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - 2006 Nov 13

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silicates
thermal stability
electronic structure
annealing
binding energy
dissociation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma",
abstract = "The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=30{\%}, 55{\%}, and 70{\%}), prepared using a direct N plasma treatment, were investigated. N 1s spectra of nitrided Hf silicate films indicate that complex chemical states are generated. In particular, energy states with a high binding energy are stable, even after a postnitridation annealing. The quantity of N incorporated into the film is not dependent on the mole fraction of Hf O2 in the film, while the thermal stability of the N in the film is significantly influenced by the fraction of Hf O2 present. The thermal stability of the N in the film critically affects the composition and thickness of the film: i.e., after the postnitridation annealing, the thickness of the silicate film and the quantity of Hf and N are decreased, as the result of the dissociation of unstable Hf-N bonds.",
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Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma. / Cho, M. H.; Chung, K. B.; Moon, D. W.

In: Applied Physics Letters, Vol. 89, No. 18, 182908, 13.11.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma

AU - Cho, M. H.

AU - Chung, K. B.

AU - Moon, D. W.

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N2 - The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=30%, 55%, and 70%), prepared using a direct N plasma treatment, were investigated. N 1s spectra of nitrided Hf silicate films indicate that complex chemical states are generated. In particular, energy states with a high binding energy are stable, even after a postnitridation annealing. The quantity of N incorporated into the film is not dependent on the mole fraction of Hf O2 in the film, while the thermal stability of the N in the film is significantly influenced by the fraction of Hf O2 present. The thermal stability of the N in the film critically affects the composition and thickness of the film: i.e., after the postnitridation annealing, the thickness of the silicate film and the quantity of Hf and N are decreased, as the result of the dissociation of unstable Hf-N bonds.

AB - The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=30%, 55%, and 70%), prepared using a direct N plasma treatment, were investigated. N 1s spectra of nitrided Hf silicate films indicate that complex chemical states are generated. In particular, energy states with a high binding energy are stable, even after a postnitridation annealing. The quantity of N incorporated into the film is not dependent on the mole fraction of Hf O2 in the film, while the thermal stability of the N in the film is significantly influenced by the fraction of Hf O2 present. The thermal stability of the N in the film critically affects the composition and thickness of the film: i.e., after the postnitridation annealing, the thickness of the silicate film and the quantity of Hf and N are decreased, as the result of the dissociation of unstable Hf-N bonds.

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