Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition

Woo Hee Kim, W. J. Maeng, Min Kyu Kim, Julien Gatineau, Hyungjun Kim

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number10
DOIs
Publication statusPublished - 2011 Aug 31

Fingerprint

Atomic layer deposition
Gate dielectrics
Cerium
Electronic structure
Plasmas
Oxides
Annealing
Spectroscopic ellipsometry
Oxygen vacancies
Photoelectron spectroscopy
Fermi level
Ultraviolet spectroscopy
Field emission
Band structure
Electron energy levels
Energy gap
Thin films
ceric oxide
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{d7fbd6ce5493422080261859e27cd704,
title = "Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition",
abstract = "We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.",
author = "Kim, {Woo Hee} and Maeng, {W. J.} and Kim, {Min Kyu} and Julien Gatineau and Hyungjun Kim",
year = "2011",
month = "8",
day = "31",
doi = "10.1149/1.3625611",
language = "English",
volume = "158",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition. / Kim, Woo Hee; Maeng, W. J.; Kim, Min Kyu; Gatineau, Julien; Kim, Hyungjun.

In: Journal of the Electrochemical Society, Vol. 158, No. 10, 31.08.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition

AU - Kim, Woo Hee

AU - Maeng, W. J.

AU - Kim, Min Kyu

AU - Gatineau, Julien

AU - Kim, Hyungjun

PY - 2011/8/31

Y1 - 2011/8/31

N2 - We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.

AB - We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.

UR - http://www.scopus.com/inward/record.url?scp=80052092311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052092311&partnerID=8YFLogxK

U2 - 10.1149/1.3625611

DO - 10.1149/1.3625611

M3 - Article

AN - SCOPUS:80052092311

VL - 158

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 10

ER -