Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition

Woo Hee Kim, W. J. Maeng, Min Kyu Kim, Julien Gatineau, Hyungjun Kim

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Abstract

We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.

Original languageEnglish
Pages (from-to)G217-G220
JournalJournal of the Electrochemical Society
Volume158
Issue number10
DOIs
Publication statusPublished - 2011 Aug 31

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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