Abstract
We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 158 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2011 Aug 31 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition. / Kim, Woo Hee; Maeng, W. J.; Kim, Min Kyu; Gatineau, Julien; Kim, Hyungjun.
In: Journal of the Electrochemical Society, Vol. 158, No. 10, 31.08.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition
AU - Kim, Woo Hee
AU - Maeng, W. J.
AU - Kim, Min Kyu
AU - Gatineau, Julien
AU - Kim, Hyungjun
PY - 2011/8/31
Y1 - 2011/8/31
N2 - We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.
AB - We have systematically investigated the electronic structure of CeO 2 dielectric by plasma enhanced atomic layer deposition (PE-ALD). The CeO2 films were deposited by using novel tris(isopropyl- cyclopentadienyl)cerium [Ce(iPrCp)3] precursor and O2 plasma. The energy band gap (3.48 eV), Fermi level (4.71 eV), and band offsets of PE-ALD CeO2 were elaborately determined by combining spectroscopic ellipsometry and ultraviolet photoemission spectroscopy (UPS) techniques. In addition, based on the experimental results of Fowler-Nordheim(F-N) tunneling and Poole-Frenkel(P-F) conduction for Al/PE-ALD CeO2/p-Si, the increased interfacial layer and reduced trapped oxide densities were found to be correlated to the increase in effective barrier height (0.89, 1.18 and 1.26 eV) and decrease in decreased trap energy levels (0.47, 0.26 and 0.18 eV) with increasing O2 annealing temperature (400, 600 and 800C), respectively. These discrepancies might be attributed to the thin film characteristics and oxygen vacancies in the CeO2 dielectrics, depending on the deposition techniques and post deposition annealing processes.
UR - http://www.scopus.com/inward/record.url?scp=80052092311&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052092311&partnerID=8YFLogxK
U2 - 10.1149/1.3625611
DO - 10.1149/1.3625611
M3 - Article
AN - SCOPUS:80052092311
VL - 158
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 10
ER -