Electronic structure of In2 O3 from resonant x-ray emission spectroscopy

L. F.J. Piper, A. Demasi, S. W. Cho, K. E. Smith, F. Fuchs, F. Bechstedt, C. Körber, A. Klein, D. J. Payne, R. G. Egdell

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Abstract

The valence and conduction band structures of In2 O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K -edge resonant x-ray emission spectroscopy, and O K -edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2 O3.

Original languageEnglish
Article number022105
JournalApplied Physics Letters
Volume94
Issue number2
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Piper, L. F. J., Demasi, A., Cho, S. W., Smith, K. E., Fuchs, F., Bechstedt, F., Körber, C., Klein, A., Payne, D. J., & Egdell, R. G. (2009). Electronic structure of In2 O3 from resonant x-ray emission spectroscopy. Applied Physics Letters, 94(2), [022105]. https://doi.org/10.1063/1.3070524