Abstract
The valence and conduction band structures of In2 O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K -edge resonant x-ray emission spectroscopy, and O K -edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2 O3.
| Original language | English |
|---|---|
| Article number | 022105 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2009 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Piper, L. F. J., Demasi, A., Cho, S. W., Smith, K. E., Fuchs, F., Bechstedt, F., Körber, C., Klein, A., Payne, D. J., & Egdell, R. G. (2009). Electronic structure of In2 O3 from resonant x-ray emission spectroscopy. Applied Physics Letters, 94(2), [022105]. https://doi.org/10.1063/1.3070524