Electronic structure of In2 O3 from resonant x-ray emission spectroscopy

L. F.J. Piper, A. Demasi, S. W. Cho, K. E. Smith, F. Fuchs, F. Bechstedt, C. Körber, A. Klein, D. J. Payne, R. G. Egdell

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34 Citations (Scopus)

Abstract

The valence and conduction band structures of In2 O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K -edge resonant x-ray emission spectroscopy, and O K -edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2 O3.

Original languageEnglish
Article number022105
JournalApplied Physics Letters
Volume94
Issue number2
DOIs
Publication statusPublished - 2009

Bibliographical note

Funding Information:
The Boston University (BU) program is supported in part by the Department of Energy under Grant No. DE-FG02-98ER45680 and in part by the Donors of the American Chemical Society Petroleum Research Fund. The BU RXES spectrometer system was funded by the U.S. Army Research Office under Grant Nos. DAAD19-01-1-0364 and DAAH04-95-0014. The National Synchrotron Light Source, Brookhaven National Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886. The NCESS facility is supported by the EPSRC-GB, U.K., under Grant No. GR/S94148. Financial support is also acknowledged from the European Community in the framework of the network of excellence NANOQUANTA (Contract No. NMP4-CT-2004-500198) and the Deutsche Forschungsgemeinschaft (Project No. Be1346/18-2).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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