Electronic structure of p-type transparent conducting oxide CuAlO2

Mohamed Salah; Joonseok Yoon; Mohamed M. El-Desoky; Zahid Hussain; Honglyoul Ju; Sung Kwan Mo

doi:10.1016/j.cap.2022.04.005

Electronic structure of p-type transparent conducting oxide CuAlO₂

Mohamed Salah, Joonseok Yoon, Mohamed M. El-Desoky, Zahid Hussain, Honglyoul Ju, Sung Kwan Mo

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Copper-based delafossite oxides are excellent candidates for the p-type transparent conducting oxide (TCO), which is essential in realizing transparent semiconductor applications. Using angle-resolved photoemission spectroscopy (ARPES), we report the low-energy electronic structure of CuAlO₂. We found that the band structure near the valence band top is characterized by hole bands with their maxima along the Brillouin zone boundary. Furthermore, the effective masses along the Γ–M and Γ–K directions were found to be (0.6 ± 0.1) m₀ and (0.9 ± 0.1) m₀, respectively, which impose an important benchmark against the existing band calculations.

Original language	English
Pages (from-to)	107-112
Number of pages	6
Journal	Current Applied Physics
Volume	39
DOIs	https://doi.org/10.1016/j.cap.2022.04.005
Publication status	Published - 2022 Jul

Bibliographical note

Funding Information:
The work performed at the Advanced Light Source was supported by the US Department of Energy, Office of Basic Energy Sciences , under Contract No. DE-AC02-05CH11231 . M.S. was funded by a scholarship ( JS3809 ) from the Ministry of Higher Education of Egypt.

Publisher Copyright:
© 2022 Korean Physical Society

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2022.04.005

Cite this

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title = "Electronic structure of p-type transparent conducting oxide CuAlO2",

abstract = "Copper-based delafossite oxides are excellent candidates for the p-type transparent conducting oxide (TCO), which is essential in realizing transparent semiconductor applications. Using angle-resolved photoemission spectroscopy (ARPES), we report the low-energy electronic structure of CuAlO2. We found that the band structure near the valence band top is characterized by hole bands with their maxima along the Brillouin zone boundary. Furthermore, the effective masses along the Γ–M and Γ–K directions were found to be (0.6 ± 0.1) m0 and (0.9 ± 0.1) m0, respectively, which impose an important benchmark against the existing band calculations.",

author = "Mohamed Salah and Joonseok Yoon and El-Desoky, {Mohamed M.} and Zahid Hussain and Honglyoul Ju and Mo, {Sung Kwan}",

note = "Funding Information: The work performed at the Advanced Light Source was supported by the US Department of Energy, Office of Basic Energy Sciences , under Contract No. DE-AC02-05CH11231 . M.S. was funded by a scholarship ( JS3809 ) from the Ministry of Higher Education of Egypt. Publisher Copyright: {\textcopyright} 2022 Korean Physical Society",

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AU - Salah, Mohamed

AU - Yoon, Joonseok

AU - El-Desoky, Mohamed M.

AU - Hussain, Zahid

AU - Ju, Honglyoul

AU - Mo, Sung Kwan

N1 - Funding Information: The work performed at the Advanced Light Source was supported by the US Department of Energy, Office of Basic Energy Sciences , under Contract No. DE-AC02-05CH11231 . M.S. was funded by a scholarship ( JS3809 ) from the Ministry of Higher Education of Egypt. Publisher Copyright: © 2022 Korean Physical Society

PY - 2022/7

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AB - Copper-based delafossite oxides are excellent candidates for the p-type transparent conducting oxide (TCO), which is essential in realizing transparent semiconductor applications. Using angle-resolved photoemission spectroscopy (ARPES), we report the low-energy electronic structure of CuAlO2. We found that the band structure near the valence band top is characterized by hole bands with their maxima along the Brillouin zone boundary. Furthermore, the effective masses along the Γ–M and Γ–K directions were found to be (0.6 ± 0.1) m0 and (0.9 ± 0.1) m0, respectively, which impose an important benchmark against the existing band calculations.

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