Electronic structure of pentacene on hafnium studied by ultraviolet photoelectron spectroscopy

Seong Jun Kang, Y. I. Yeonjin, Chung Yi Kim, Chung Nam Whang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electronic structure of pentacene on hafnium, which is a low work function metal, was analyzed by using ultraviolet photoelectron spectroscopy. The energy level alignment was studied by using the onset of the highest occupied molecular orbital level and the shift of the vacuum level of the pentacene layer, which was deposited on a clean hafnium surface in a stepwise manner. The measured onset of the highest occupied molecular orbital energy level was 1.52 eV from the Fermi level of hafnium, The vacuum level was shifted 0.28 eV toward higher binding energy with additional pentacene layers, which means an interfacial dipole exists at the interface between pentacene and hafnium, We confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a pentacene thin-film transistor.

Original languageEnglish
Pages (from-to)L760-L762
JournalJournal of the Korean Physical Society
Volume46
Issue number4
Publication statusPublished - 2005 Apr 1

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hafnium
ultraviolet spectroscopy
photoelectron spectroscopy
electronic structure
molecular orbitals
energy levels
vacuum
metals
transistors
binding energy
alignment
injection
dipoles
shift
thin films
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The electronic structure of pentacene on hafnium, which is a low work function metal, was analyzed by using ultraviolet photoelectron spectroscopy. The energy level alignment was studied by using the onset of the highest occupied molecular orbital level and the shift of the vacuum level of the pentacene layer, which was deposited on a clean hafnium surface in a stepwise manner. The measured onset of the highest occupied molecular orbital energy level was 1.52 eV from the Fermi level of hafnium, The vacuum level was shifted 0.28 eV toward higher binding energy with additional pentacene layers, which means an interfacial dipole exists at the interface between pentacene and hafnium, We confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a pentacene thin-film transistor.",
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Electronic structure of pentacene on hafnium studied by ultraviolet photoelectron spectroscopy. / Kang, Seong Jun; Yeonjin, Y. I.; Kim, Chung Yi; Whang, Chung Nam.

In: Journal of the Korean Physical Society, Vol. 46, No. 4, 01.04.2005, p. L760-L762.

Research output: Contribution to journalArticle

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AU - Kang, Seong Jun

AU - Yeonjin, Y. I.

AU - Kim, Chung Yi

AU - Whang, Chung Nam

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AB - The electronic structure of pentacene on hafnium, which is a low work function metal, was analyzed by using ultraviolet photoelectron spectroscopy. The energy level alignment was studied by using the onset of the highest occupied molecular orbital level and the shift of the vacuum level of the pentacene layer, which was deposited on a clean hafnium surface in a stepwise manner. The measured onset of the highest occupied molecular orbital energy level was 1.52 eV from the Fermi level of hafnium, The vacuum level was shifted 0.28 eV toward higher binding energy with additional pentacene layers, which means an interfacial dipole exists at the interface between pentacene and hafnium, We confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a pentacene thin-film transistor.

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