Electronic structure of Te/Sb/Ge and Sb/Te/Ge multi layer films using photoelectron spectroscopy

Heyuck Baeck Ju, Young Kun Ann, Kwang Ho Jeong, Mann Ho Cho, Dae Hong Ko, Jae Hee Oh, Hongsik Jeong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Te/Sb/Ge and Sb/Te/Ge multilayer films with an atomically controlled interface were synthesized using effusion cell and e-beam techniques. The layers interacted during the deposition, resulting in films composed of Sb-Te+Sb-Sb/Ge and Sb/Sb-Te/Ge-Te/Ge respectively. Atomic diffusion and chemical reactions in films during the annealing process were investigated by photoemission spectroscopy. In the case of Te/Sb/Ge, Ge diffused into the Sb-Te region released Sb in Sb-Te bonds and interacted with residual Te, resulting in a change in valence band line shape, which was similar to that of a Ge 1Sb2Te4 crystalline phase. The Ge-Sb-Te alloy underwent a stoichiometric change during the process, resulting in a 1.2:2:4 ratio, consistent with the most stable stoichiometry value calculated by ab initio density-functional theory. The experimental results strongly suggest that the most stable structure is generated through a reaction process involving the minimization of total energy. In addition, Ge in the Sb/Te/Ge film diffused into Sb-Te region by thermal energy. However, Ge was not able to diffuse to the near surface because Sb atoms of the high concentration at the surface were easily segregated and hindered the diffusion of other elements.

Original languageEnglish
Pages (from-to)13634-13638
Number of pages5
JournalJournal of the American Chemical Society
Volume131
Issue number38
DOIs
Publication statusPublished - 2009 Oct 19

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Photoelectron Spectroscopy
Multilayer films
Photoelectron spectroscopy
Electronic structure
Hot Temperature
Valence bands
Thermal energy
Stoichiometry
Density functional theory
Chemical reactions
Annealing
Crystalline materials
Atoms

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

@article{49b1b5d456174e628237419723689736,
title = "Electronic structure of Te/Sb/Ge and Sb/Te/Ge multi layer films using photoelectron spectroscopy",
abstract = "Te/Sb/Ge and Sb/Te/Ge multilayer films with an atomically controlled interface were synthesized using effusion cell and e-beam techniques. The layers interacted during the deposition, resulting in films composed of Sb-Te+Sb-Sb/Ge and Sb/Sb-Te/Ge-Te/Ge respectively. Atomic diffusion and chemical reactions in films during the annealing process were investigated by photoemission spectroscopy. In the case of Te/Sb/Ge, Ge diffused into the Sb-Te region released Sb in Sb-Te bonds and interacted with residual Te, resulting in a change in valence band line shape, which was similar to that of a Ge 1Sb2Te4 crystalline phase. The Ge-Sb-Te alloy underwent a stoichiometric change during the process, resulting in a 1.2:2:4 ratio, consistent with the most stable stoichiometry value calculated by ab initio density-functional theory. The experimental results strongly suggest that the most stable structure is generated through a reaction process involving the minimization of total energy. In addition, Ge in the Sb/Te/Ge film diffused into Sb-Te region by thermal energy. However, Ge was not able to diffuse to the near surface because Sb atoms of the high concentration at the surface were easily segregated and hindered the diffusion of other elements.",
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Electronic structure of Te/Sb/Ge and Sb/Te/Ge multi layer films using photoelectron spectroscopy. / Ju, Heyuck Baeck; Ann, Young Kun; Jeong, Kwang Ho; Cho, Mann Ho; Ko, Dae Hong; Oh, Jae Hee; Jeong, Hongsik.

In: Journal of the American Chemical Society, Vol. 131, No. 38, 19.10.2009, p. 13634-13638.

Research output: Contribution to journalArticle

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AU - Ju, Heyuck Baeck

AU - Ann, Young Kun

AU - Jeong, Kwang Ho

AU - Cho, Mann Ho

AU - Ko, Dae Hong

AU - Oh, Jae Hee

AU - Jeong, Hongsik

PY - 2009/10/19

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N2 - Te/Sb/Ge and Sb/Te/Ge multilayer films with an atomically controlled interface were synthesized using effusion cell and e-beam techniques. The layers interacted during the deposition, resulting in films composed of Sb-Te+Sb-Sb/Ge and Sb/Sb-Te/Ge-Te/Ge respectively. Atomic diffusion and chemical reactions in films during the annealing process were investigated by photoemission spectroscopy. In the case of Te/Sb/Ge, Ge diffused into the Sb-Te region released Sb in Sb-Te bonds and interacted with residual Te, resulting in a change in valence band line shape, which was similar to that of a Ge 1Sb2Te4 crystalline phase. The Ge-Sb-Te alloy underwent a stoichiometric change during the process, resulting in a 1.2:2:4 ratio, consistent with the most stable stoichiometry value calculated by ab initio density-functional theory. The experimental results strongly suggest that the most stable structure is generated through a reaction process involving the minimization of total energy. In addition, Ge in the Sb/Te/Ge film diffused into Sb-Te region by thermal energy. However, Ge was not able to diffuse to the near surface because Sb atoms of the high concentration at the surface were easily segregated and hindered the diffusion of other elements.

AB - Te/Sb/Ge and Sb/Te/Ge multilayer films with an atomically controlled interface were synthesized using effusion cell and e-beam techniques. The layers interacted during the deposition, resulting in films composed of Sb-Te+Sb-Sb/Ge and Sb/Sb-Te/Ge-Te/Ge respectively. Atomic diffusion and chemical reactions in films during the annealing process were investigated by photoemission spectroscopy. In the case of Te/Sb/Ge, Ge diffused into the Sb-Te region released Sb in Sb-Te bonds and interacted with residual Te, resulting in a change in valence band line shape, which was similar to that of a Ge 1Sb2Te4 crystalline phase. The Ge-Sb-Te alloy underwent a stoichiometric change during the process, resulting in a 1.2:2:4 ratio, consistent with the most stable stoichiometry value calculated by ab initio density-functional theory. The experimental results strongly suggest that the most stable structure is generated through a reaction process involving the minimization of total energy. In addition, Ge in the Sb/Te/Ge film diffused into Sb-Te region by thermal energy. However, Ge was not able to diffuse to the near surface because Sb atoms of the high concentration at the surface were easily segregated and hindered the diffusion of other elements.

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