Abstract
Electronic structures with the copper iodide (CuI) interlayer in organic electronic devices were measured and its strong electron-withdrawing properties were revealed. In situ ultraviolet and X-ray photoelectron spectroscopy showed the interfacial electronic structures of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB)/CuI/indium-tin-oxide (ITO) and tris-(8-hydroxyquinolinato)aluminum (Alq3)/CuI/ITO as a representative hole- and electron-transport material. The large work function of the CuI interlayer induces electron transfer from both molecules and ITO to CuI. As a result, CuI dramatically reduces the hole injection barrier (HIB) from ITO to NPB and Alq3 layers. Notably, CuI assists molecular ordering of the NPB layer, which would increase the intermolecular interaction, so would enhance the charge transport properties. Simultaneous enhancement in HIB and molecular ordering with the CuI interlayer would improve the device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 3298-3305 |
| Number of pages | 8 |
| Journal | Organic Electronics |
| Volume | 15 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2014 Nov |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
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Electronic structures of CuI interlayers in organic electronic devices : An interfacial studies of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine/CuI and tris-(8-hydroxyquinolinato)aluminum/CuI. / Park, Soohyung; Lee, Hyunbok; Lee, Jeihyun; Lee, Younjoo; Yi, Yeonjin.
In: Organic Electronics, Vol. 15, No. 11, 11.2014, p. 3298-3305.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electronic structures of CuI interlayers in organic electronic devices
T2 - An interfacial studies of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine/CuI and tris-(8-hydroxyquinolinato)aluminum/CuI
AU - Park, Soohyung
AU - Lee, Hyunbok
AU - Lee, Jeihyun
AU - Lee, Younjoo
AU - Yi, Yeonjin
PY - 2014/11
Y1 - 2014/11
N2 - Electronic structures with the copper iodide (CuI) interlayer in organic electronic devices were measured and its strong electron-withdrawing properties were revealed. In situ ultraviolet and X-ray photoelectron spectroscopy showed the interfacial electronic structures of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB)/CuI/indium-tin-oxide (ITO) and tris-(8-hydroxyquinolinato)aluminum (Alq3)/CuI/ITO as a representative hole- and electron-transport material. The large work function of the CuI interlayer induces electron transfer from both molecules and ITO to CuI. As a result, CuI dramatically reduces the hole injection barrier (HIB) from ITO to NPB and Alq3 layers. Notably, CuI assists molecular ordering of the NPB layer, which would increase the intermolecular interaction, so would enhance the charge transport properties. Simultaneous enhancement in HIB and molecular ordering with the CuI interlayer would improve the device performance.
AB - Electronic structures with the copper iodide (CuI) interlayer in organic electronic devices were measured and its strong electron-withdrawing properties were revealed. In situ ultraviolet and X-ray photoelectron spectroscopy showed the interfacial electronic structures of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB)/CuI/indium-tin-oxide (ITO) and tris-(8-hydroxyquinolinato)aluminum (Alq3)/CuI/ITO as a representative hole- and electron-transport material. The large work function of the CuI interlayer induces electron transfer from both molecules and ITO to CuI. As a result, CuI dramatically reduces the hole injection barrier (HIB) from ITO to NPB and Alq3 layers. Notably, CuI assists molecular ordering of the NPB layer, which would increase the intermolecular interaction, so would enhance the charge transport properties. Simultaneous enhancement in HIB and molecular ordering with the CuI interlayer would improve the device performance.
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UR - http://www.scopus.com/inward/citedby.url?scp=84908042729&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2014.09.005
DO - 10.1016/j.orgel.2014.09.005
M3 - Article
AN - SCOPUS:84908042729
VL - 15
SP - 3298
EP - 3305
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 11
ER -