Electrostatic bonding of silicon-to-ITO coated #7059 glass using Li-doped oxide interlayer

Jee Won Jeong, Byeong Kwon Ju, Duck Jung Lee, Yun Hi Lee, Myung Hwan Oh, Doo Jin Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for the packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on the processing and results for silicon-to-ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. The breakdown voltage of lithium doped oxide interlayer was investigated with the comparison of Sputtered #7740. Silicon-to-ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with applied voltages ranging from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in the bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998 Dec 1

Fingerprint

electrostatic bonding
ITO (semiconductors)
interlayers
oxides
glass
silicon
direct current
packaging
lithium
lithium oxides
tensile tests
electrical faults
ions
emitters
mass spectroscopy
evaporation
wafers
electron beams
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jeong, Jee Won ; Ju, Byeong Kwon ; Lee, Duck Jung ; Lee, Yun Hi ; Oh, Myung Hwan ; Choi, Doo Jin. / Electrostatic bonding of silicon-to-ITO coated #7059 glass using Li-doped oxide interlayer. In: Journal of the Korean Physical Society. 1998 ; Vol. 33, No. SUPPL. 2.
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abstract = "Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for the packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on the processing and results for silicon-to-ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. The breakdown voltage of lithium doped oxide interlayer was investigated with the comparison of Sputtered #7740. Silicon-to-ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with applied voltages ranging from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in the bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.",
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Electrostatic bonding of silicon-to-ITO coated #7059 glass using Li-doped oxide interlayer. / Jeong, Jee Won; Ju, Byeong Kwon; Lee, Duck Jung; Lee, Yun Hi; Oh, Myung Hwan; Choi, Doo Jin.

In: Journal of the Korean Physical Society, Vol. 33, No. SUPPL. 2, 01.12.1998.

Research output: Contribution to journalArticle

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T1 - Electrostatic bonding of silicon-to-ITO coated #7059 glass using Li-doped oxide interlayer

AU - Jeong, Jee Won

AU - Ju, Byeong Kwon

AU - Lee, Duck Jung

AU - Lee, Yun Hi

AU - Oh, Myung Hwan

AU - Choi, Doo Jin

PY - 1998/12/1

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N2 - Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for the packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on the processing and results for silicon-to-ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. The breakdown voltage of lithium doped oxide interlayer was investigated with the comparison of Sputtered #7740. Silicon-to-ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with applied voltages ranging from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in the bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

AB - Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for the packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on the processing and results for silicon-to-ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. The breakdown voltage of lithium doped oxide interlayer was investigated with the comparison of Sputtered #7740. Silicon-to-ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with applied voltages ranging from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in the bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

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