Electrostatically actuated carbon nanowire nanotweezers

Jiyoung Chang, Byung-Kwon Min, Jongbaeg Kim, Sang Jo Lee, Liwei Lin

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Nanotweezers based on two carbon nanowires by means of localized chemical vapor deposition using a focused ion beam (FIB-CVD) have been successfully demonstrated. The nanotweezers have been constructed on fixed microelectrodes made from a heavily doped SOI wafer using a single-mask and deep reactive ion etching (DRIE) process. The location, dimension and gap between the two nanowires are precisely controlled such that the tweezing motion and the operation voltage can be easily adjusted. Both bent type and straight type nanotweezers with parallel nanowires of 300nm in diameter and 15-19.6νm in length have been built and tested. Experimental results show continuous gap closing movements of 0.6-1.2νm achieved with the operation voltage down to 30V for the prototype devices. The modulus of elasticity of FIB-CVD carbon nanowires also has been measured to be 84.5GPa from the tweezing motion. Potential applications of these nanotweezers include manipulation of nanoparticles and nanoscale objects.

Original languageEnglish
Article number065017
JournalSmart Materials and Structures
Volume18
Issue number6
DOIs
Publication statusPublished - 2009 Aug 18

Fingerprint

Nanowires
nanowires
Carbon
Chemical vapor deposition
carbon
vapor deposition
Microelectrodes
Focused ion beams
Reactive ion etching
SOI (semiconductors)
Electric potential
electric potential
closing
Masks
manipulators
modulus of elasticity
masks
Elastic moduli
ion beams
prototypes

All Science Journal Classification (ASJC) codes

  • Signal Processing
  • Civil and Structural Engineering
  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering

Cite this

@article{c2578ae920054b6081f263fad029d69c,
title = "Electrostatically actuated carbon nanowire nanotweezers",
abstract = "Nanotweezers based on two carbon nanowires by means of localized chemical vapor deposition using a focused ion beam (FIB-CVD) have been successfully demonstrated. The nanotweezers have been constructed on fixed microelectrodes made from a heavily doped SOI wafer using a single-mask and deep reactive ion etching (DRIE) process. The location, dimension and gap between the two nanowires are precisely controlled such that the tweezing motion and the operation voltage can be easily adjusted. Both bent type and straight type nanotweezers with parallel nanowires of 300nm in diameter and 15-19.6νm in length have been built and tested. Experimental results show continuous gap closing movements of 0.6-1.2νm achieved with the operation voltage down to 30V for the prototype devices. The modulus of elasticity of FIB-CVD carbon nanowires also has been measured to be 84.5GPa from the tweezing motion. Potential applications of these nanotweezers include manipulation of nanoparticles and nanoscale objects.",
author = "Jiyoung Chang and Byung-Kwon Min and Jongbaeg Kim and Lee, {Sang Jo} and Liwei Lin",
year = "2009",
month = "8",
day = "18",
doi = "10.1088/0964-1726/18/6/065017",
language = "English",
volume = "18",
journal = "Smart Materials and Structures",
issn = "0964-1726",
publisher = "IOP Publishing Ltd.",
number = "6",

}

Electrostatically actuated carbon nanowire nanotweezers. / Chang, Jiyoung; Min, Byung-Kwon; Kim, Jongbaeg; Lee, Sang Jo; Lin, Liwei.

In: Smart Materials and Structures, Vol. 18, No. 6, 065017, 18.08.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrostatically actuated carbon nanowire nanotweezers

AU - Chang, Jiyoung

AU - Min, Byung-Kwon

AU - Kim, Jongbaeg

AU - Lee, Sang Jo

AU - Lin, Liwei

PY - 2009/8/18

Y1 - 2009/8/18

N2 - Nanotweezers based on two carbon nanowires by means of localized chemical vapor deposition using a focused ion beam (FIB-CVD) have been successfully demonstrated. The nanotweezers have been constructed on fixed microelectrodes made from a heavily doped SOI wafer using a single-mask and deep reactive ion etching (DRIE) process. The location, dimension and gap between the two nanowires are precisely controlled such that the tweezing motion and the operation voltage can be easily adjusted. Both bent type and straight type nanotweezers with parallel nanowires of 300nm in diameter and 15-19.6νm in length have been built and tested. Experimental results show continuous gap closing movements of 0.6-1.2νm achieved with the operation voltage down to 30V for the prototype devices. The modulus of elasticity of FIB-CVD carbon nanowires also has been measured to be 84.5GPa from the tweezing motion. Potential applications of these nanotweezers include manipulation of nanoparticles and nanoscale objects.

AB - Nanotweezers based on two carbon nanowires by means of localized chemical vapor deposition using a focused ion beam (FIB-CVD) have been successfully demonstrated. The nanotweezers have been constructed on fixed microelectrodes made from a heavily doped SOI wafer using a single-mask and deep reactive ion etching (DRIE) process. The location, dimension and gap between the two nanowires are precisely controlled such that the tweezing motion and the operation voltage can be easily adjusted. Both bent type and straight type nanotweezers with parallel nanowires of 300nm in diameter and 15-19.6νm in length have been built and tested. Experimental results show continuous gap closing movements of 0.6-1.2νm achieved with the operation voltage down to 30V for the prototype devices. The modulus of elasticity of FIB-CVD carbon nanowires also has been measured to be 84.5GPa from the tweezing motion. Potential applications of these nanotweezers include manipulation of nanoparticles and nanoscale objects.

UR - http://www.scopus.com/inward/record.url?scp=68549104417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68549104417&partnerID=8YFLogxK

U2 - 10.1088/0964-1726/18/6/065017

DO - 10.1088/0964-1726/18/6/065017

M3 - Article

VL - 18

JO - Smart Materials and Structures

JF - Smart Materials and Structures

SN - 0964-1726

IS - 6

M1 - 065017

ER -