Nanoscale tweezers are integrated to Deep Reactive Ion Etching (DRIE)-processed microelectrodes by localized chemical vapor deposition using focused ion beam (FIB-CVD). The MEMS electrodes for electrostatic actuation of nano tweezers are fabricated on a heavily doped SOI wafer, which works as the interconnecting platform to control nanoscale device from macro-world. Unlike the Carbon Nano Tube (CNT)-based nano tweezers, the dimension and gap between the pillars are well-controlled such that the designed range of motion and the operation voltage are easily achieved Compared to repulsive nano tweezers, the actuation voltage is at least an order lower for the similar range of motion. Repeated electrostatic tweezing action for two sets of tweezers shapes has been successfully demonstrated. For bent type tweezers, short pillar is deposited on the edge of electrode to adjust the initial gap of tweezers which measures 17μm in length and 300nm in diameter. The threshold voltages that causes snap-down are dependent on the initial gap size of the unactuated pillars, and the measured value are 93V for 3.5μm and 30V for 2.2μm gaps. The Dimension of straight type tweezers is 19.6μm in length and 300nm in diameter with 6.9μm initial gap distance. Tweezing range is 3.4pm and snap down voltage is 102V. Young's modulus of the FIB-CVD carbon tweezers is estimated to be 377GPa based on the experimental results. Tweezers with complicated 3-dimensional shapes are also presented.