TY - GEN
T1 - Electrostatically actuated nano tweezers fabricated on micro processed electrodes
AU - Chang, Jiyoung
AU - Kim, Jongbaeg
AU - Min, Byung Kwon
AU - Lee, Sang Jo
AU - Lin, Liwei
PY - 2006
Y1 - 2006
N2 - Nanoscale tweezers are integrated to Deep Reactive Ion Etching (DRIE)-processed microelectrodes by localized chemical vapor deposition using focused ion beam (FIB-CVD). The MEMS electrodes for electrostatic actuation of nano tweezers are fabricated on a heavily doped SOI wafer, which works as the interconnecting platform to control nanoscale device from macro-world. Unlike the Carbon Nano Tube (CNT)-based nano tweezers, the dimension and gap between the pillars are well-controlled such that the designed range of motion and the operation voltage are easily achieved Compared to repulsive nano tweezers, the actuation voltage is at least an order lower for the similar range of motion. Repeated electrostatic tweezing action for two sets of tweezers shapes has been successfully demonstrated. For bent type tweezers, short pillar is deposited on the edge of electrode to adjust the initial gap of tweezers which measures 17μm in length and 300nm in diameter. The threshold voltages that causes snap-down are dependent on the initial gap size of the unactuated pillars, and the measured value are 93V for 3.5μm and 30V for 2.2μm gaps. The Dimension of straight type tweezers is 19.6μm in length and 300nm in diameter with 6.9μm initial gap distance. Tweezing range is 3.4pm and snap down voltage is 102V. Young's modulus of the FIB-CVD carbon tweezers is estimated to be 377GPa based on the experimental results. Tweezers with complicated 3-dimensional shapes are also presented.
AB - Nanoscale tweezers are integrated to Deep Reactive Ion Etching (DRIE)-processed microelectrodes by localized chemical vapor deposition using focused ion beam (FIB-CVD). The MEMS electrodes for electrostatic actuation of nano tweezers are fabricated on a heavily doped SOI wafer, which works as the interconnecting platform to control nanoscale device from macro-world. Unlike the Carbon Nano Tube (CNT)-based nano tweezers, the dimension and gap between the pillars are well-controlled such that the designed range of motion and the operation voltage are easily achieved Compared to repulsive nano tweezers, the actuation voltage is at least an order lower for the similar range of motion. Repeated electrostatic tweezing action for two sets of tweezers shapes has been successfully demonstrated. For bent type tweezers, short pillar is deposited on the edge of electrode to adjust the initial gap of tweezers which measures 17μm in length and 300nm in diameter. The threshold voltages that causes snap-down are dependent on the initial gap size of the unactuated pillars, and the measured value are 93V for 3.5μm and 30V for 2.2μm gaps. The Dimension of straight type tweezers is 19.6μm in length and 300nm in diameter with 6.9μm initial gap distance. Tweezing range is 3.4pm and snap down voltage is 102V. Young's modulus of the FIB-CVD carbon tweezers is estimated to be 377GPa based on the experimental results. Tweezers with complicated 3-dimensional shapes are also presented.
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U2 - 10.1109/NEMS.2006.334784
DO - 10.1109/NEMS.2006.334784
M3 - Conference contribution
AN - SCOPUS:46149091287
SN - 1424401402
SN - 9781424401406
T3 - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
SP - 1440
EP - 1444
BT - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
T2 - 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Y2 - 18 January 2006 through 21 January 2006
ER -