Embedded STT-MRAM

Device and design

Seung H. Kang, Seongook Jung

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Abstract Spin-transfer-torque magnetoresistive random access memory (STTMRAM) is made of a combination of semiconductor integrated circuits (IC) and a dense array of nanometer-scale magnetic tunnel junctions (MTJ). This emerging memory is of growing technological interest due to its potential to bring disruptivedevice innovation to the world of electronics. STT-MRAM is capable of providing high speed, unlimited endurance, and nonvolatility simultaneously, which is often recognized as a unique advantage over conventional and other emerging memories. While the technology is at an early stage and evolving in multiple platforms, STTMRAM is particularly compelling as an embedded memory for system-on-chip (SOC). STT-MRAM can be integrated into SOC without altering baseline logic platforms both in process and in design. This chapter overviews key device and circuit subjects from the perspective of co-designing logic and MTJ.

Original languageEnglish
Title of host publicationMore than Moore Technologies for Next Generation Computer Design
PublisherSpringer New York
Pages73-99
Number of pages27
ISBN (Electronic)9781493921638
ISBN (Print)9781493921621
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

MRAM devices
Tunnel junctions
Data storage equipment
Magnetic scales
Torque
Integrated circuits
Durability
Electronic equipment
Innovation
Semiconductor materials
Networks (circuits)
System-on-chip

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Computer Science(all)

Cite this

Kang, S. H., & Jung, S. (2015). Embedded STT-MRAM: Device and design. In More than Moore Technologies for Next Generation Computer Design (pp. 73-99). Springer New York. https://doi.org/10.1007/978-1-4939-2163-8_4
Kang, Seung H. ; Jung, Seongook. / Embedded STT-MRAM : Device and design. More than Moore Technologies for Next Generation Computer Design. Springer New York, 2015. pp. 73-99
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Kang, SH & Jung, S 2015, Embedded STT-MRAM: Device and design. in More than Moore Technologies for Next Generation Computer Design. Springer New York, pp. 73-99. https://doi.org/10.1007/978-1-4939-2163-8_4

Embedded STT-MRAM : Device and design. / Kang, Seung H.; Jung, Seongook.

More than Moore Technologies for Next Generation Computer Design. Springer New York, 2015. p. 73-99.

Research output: Chapter in Book/Report/Conference proceedingChapter

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AB - Abstract Spin-transfer-torque magnetoresistive random access memory (STTMRAM) is made of a combination of semiconductor integrated circuits (IC) and a dense array of nanometer-scale magnetic tunnel junctions (MTJ). This emerging memory is of growing technological interest due to its potential to bring disruptivedevice innovation to the world of electronics. STT-MRAM is capable of providing high speed, unlimited endurance, and nonvolatility simultaneously, which is often recognized as a unique advantage over conventional and other emerging memories. While the technology is at an early stage and evolving in multiple platforms, STTMRAM is particularly compelling as an embedded memory for system-on-chip (SOC). STT-MRAM can be integrated into SOC without altering baseline logic platforms both in process and in design. This chapter overviews key device and circuit subjects from the perspective of co-designing logic and MTJ.

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Kang SH, Jung S. Embedded STT-MRAM: Device and design. In More than Moore Technologies for Next Generation Computer Design. Springer New York. 2015. p. 73-99 https://doi.org/10.1007/978-1-4939-2163-8_4