Energy band structure and electrical properties of (La2 O 3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) system

Jun Kyu Yang, Hyung-Ho Park

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

This letter investigates the chemical bonding state and energy band structure of (La2 O3) 1-x (SiO2) x (0≤x≤1) films grown on sulfur-passivated n -GaAs (001). The dielectric bandgap and interfacial band alignment were modified by compounding the La2 O3 films with SiO2. A shift in binding energy of the core level was observed by comparing the electronegativities of the second nearest-neighbor element. The controlled parameters of energy band structure were systematically monitored by valence band and absorption spectra. Band offset values were almost linearly related to the concentration of SiO2 when no Fermi level pinning in the midgap of n -GaAs was assumed. The correlation between band parameter and electrical properties, as probed by capacitance and leakage current measurements, is discussed.

Original languageEnglish
Article number202102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number20
DOIs
Publication statusPublished - 2005 Nov 14

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energy bands
electrical properties
compounding
leakage
sulfur
binding energy
capacitance
alignment
valence
absorption spectra
shift

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Energy band structure and electrical properties of (La2 O 3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) system",
abstract = "This letter investigates the chemical bonding state and energy band structure of (La2 O3) 1-x (SiO2) x (0≤x≤1) films grown on sulfur-passivated n -GaAs (001). The dielectric bandgap and interfacial band alignment were modified by compounding the La2 O3 films with SiO2. A shift in binding energy of the core level was observed by comparing the electronegativities of the second nearest-neighbor element. The controlled parameters of energy band structure were systematically monitored by valence band and absorption spectra. Band offset values were almost linearly related to the concentration of SiO2 when no Fermi level pinning in the midgap of n -GaAs was assumed. The correlation between band parameter and electrical properties, as probed by capacitance and leakage current measurements, is discussed.",
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Energy band structure and electrical properties of (La2 O 3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) system. / Yang, Jun Kyu; Park, Hyung-Ho.

In: Applied Physics Letters, Vol. 87, No. 20, 202102, 14.11.2005, p. 1-3.

Research output: Contribution to journalArticle

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AB - This letter investigates the chemical bonding state and energy band structure of (La2 O3) 1-x (SiO2) x (0≤x≤1) films grown on sulfur-passivated n -GaAs (001). The dielectric bandgap and interfacial band alignment were modified by compounding the La2 O3 films with SiO2. A shift in binding energy of the core level was observed by comparing the electronegativities of the second nearest-neighbor element. The controlled parameters of energy band structure were systematically monitored by valence band and absorption spectra. Band offset values were almost linearly related to the concentration of SiO2 when no Fermi level pinning in the midgap of n -GaAs was assumed. The correlation between band parameter and electrical properties, as probed by capacitance and leakage current measurements, is discussed.

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