Energy-Dependent Spectral Analysis of Photon-Assisted Carrier Transport at Resonance in Graphene Oxide

Juyeong Oh; Sun Jun Kim; Hyong Seo Yoon; Jaemin Lee; Jae Hun Kim; Yongshik Lee; Seong Chan Jun

doi:10.1002/adom.201800861

Energy-Dependent Spectral Analysis of Photon-Assisted Carrier Transport at Resonance in Graphene Oxide

Juyeong Oh, Sun Jun Kim, Hyong Seo Yoon, Jaemin Lee, Jae Hun Kim, Yongshik Lee, Seong Chan Jun

Research output: Contribution to journal › Article › peer-review

Abstract

Owing to its excellent optoelectronic properties, graphene oxide (GO) has been investigated for use in optoelectronic devices in the past decade. GO-based devices such as photodetectors are expected to show remarkable high-frequency transmittances. However, the band properties are typically investigated using optical measurement methods, and these techniques have limitations on the maximum light intensity that can be employed and require the use of filters. To overcome these problems, high-frequency electrical measurements are applied to use resonance under illumination. The measured resonance signal probes the band properties of GO, while the electromagnetic radiation excites the samples. The spectral analysis of GO-based optoelectronic devices reveals the relationship between the band properties and the photon energy. Moreover, the resistance of GO, which is measured via the de-embedding process, is related to the band levels and photon energies. Thus, spectral analysis can be used to probe not only the photodetector properties of GO-based devices but also their band structure.

Original language	English
Article number	1800861
Journal	Advanced Optical Materials
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/adom.201800861
Publication status	Published - 2019 Mar 5

Bibliographical note

Funding Information:
This work was partially supported by the Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant No. NRF-2017M3A7B4041987) and the National Center for Optically Assisted Mechanical Systems (Grant No. 2015R1A5A1037668) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST). Experimental setup and design for high-frequency measurements: S.J.K., H.S.Y.; optical illumination setup and design: J.H.K.; electrical analysis: J.L. and Y.L.; analysis and writing of the paper: J.O., S.C.J.

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1002/adom.201800861

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@article{c9ac769eabe34b659ffb4007a1359c0c,

title = "Energy-Dependent Spectral Analysis of Photon-Assisted Carrier Transport at Resonance in Graphene Oxide",

abstract = "Owing to its excellent optoelectronic properties, graphene oxide (GO) has been investigated for use in optoelectronic devices in the past decade. GO-based devices such as photodetectors are expected to show remarkable high-frequency transmittances. However, the band properties are typically investigated using optical measurement methods, and these techniques have limitations on the maximum light intensity that can be employed and require the use of filters. To overcome these problems, high-frequency electrical measurements are applied to use resonance under illumination. The measured resonance signal probes the band properties of GO, while the electromagnetic radiation excites the samples. The spectral analysis of GO-based optoelectronic devices reveals the relationship between the band properties and the photon energy. Moreover, the resistance of GO, which is measured via the de-embedding process, is related to the band levels and photon energies. Thus, spectral analysis can be used to probe not only the photodetector properties of GO-based devices but also their band structure.",

author = "Juyeong Oh and Kim, {Sun Jun} and Yoon, {Hyong Seo} and Jaemin Lee and Kim, {Jae Hun} and Yongshik Lee and Jun, {Seong Chan}",

note = "Funding Information: This work was partially supported by the Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant No. NRF-2017M3A7B4041987) and the National Center for Optically Assisted Mechanical Systems (Grant No. 2015R1A5A1037668) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST). Experimental setup and design for high-frequency measurements: S.J.K., H.S.Y.; optical illumination setup and design: J.H.K.; electrical analysis: J.L. and Y.L.; analysis and writing of the paper: J.O., S.C.J. Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = mar,

day = "5",

doi = "10.1002/adom.201800861",

language = "English",

volume = "7",

journal = "Advanced Optical Materials",

issn = "2195-1071",

publisher = "John Wiley and Sons Inc.",

number = "5",

}

TY - JOUR

T1 - Energy-Dependent Spectral Analysis of Photon-Assisted Carrier Transport at Resonance in Graphene Oxide

AU - Oh, Juyeong

AU - Kim, Sun Jun

AU - Yoon, Hyong Seo

AU - Lee, Jaemin

AU - Kim, Jae Hun

AU - Lee, Yongshik

AU - Jun, Seong Chan

N1 - Funding Information: This work was partially supported by the Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant No. NRF-2017M3A7B4041987) and the National Center for Optically Assisted Mechanical Systems (Grant No. 2015R1A5A1037668) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST). Experimental setup and design for high-frequency measurements: S.J.K., H.S.Y.; optical illumination setup and design: J.H.K.; electrical analysis: J.L. and Y.L.; analysis and writing of the paper: J.O., S.C.J. Publisher Copyright: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/3/5

Y1 - 2019/3/5

N2 - Owing to its excellent optoelectronic properties, graphene oxide (GO) has been investigated for use in optoelectronic devices in the past decade. GO-based devices such as photodetectors are expected to show remarkable high-frequency transmittances. However, the band properties are typically investigated using optical measurement methods, and these techniques have limitations on the maximum light intensity that can be employed and require the use of filters. To overcome these problems, high-frequency electrical measurements are applied to use resonance under illumination. The measured resonance signal probes the band properties of GO, while the electromagnetic radiation excites the samples. The spectral analysis of GO-based optoelectronic devices reveals the relationship between the band properties and the photon energy. Moreover, the resistance of GO, which is measured via the de-embedding process, is related to the band levels and photon energies. Thus, spectral analysis can be used to probe not only the photodetector properties of GO-based devices but also their band structure.

AB - Owing to its excellent optoelectronic properties, graphene oxide (GO) has been investigated for use in optoelectronic devices in the past decade. GO-based devices such as photodetectors are expected to show remarkable high-frequency transmittances. However, the band properties are typically investigated using optical measurement methods, and these techniques have limitations on the maximum light intensity that can be employed and require the use of filters. To overcome these problems, high-frequency electrical measurements are applied to use resonance under illumination. The measured resonance signal probes the band properties of GO, while the electromagnetic radiation excites the samples. The spectral analysis of GO-based optoelectronic devices reveals the relationship between the band properties and the photon energy. Moreover, the resistance of GO, which is measured via the de-embedding process, is related to the band levels and photon energies. Thus, spectral analysis can be used to probe not only the photodetector properties of GO-based devices but also their band structure.

UR - http://www.scopus.com/inward/record.url?scp=85059278494&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059278494&partnerID=8YFLogxK

U2 - 10.1002/adom.201800861

DO - 10.1002/adom.201800861

M3 - Article

AN - SCOPUS:85059278494

SN - 2195-1071

VL - 7

JO - Advanced Optical Materials

JF - Advanced Optical Materials

IS - 5

M1 - 1800861

ER -

Energy-Dependent Spectral Analysis of Photon-Assisted Carrier Transport at Resonance in Graphene Oxide

Abstract

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