Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy

C. Y. Kim, J. H. Seo, S. W. Cho, K. H. Yoo, C. N. Whang, S. J. Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the characterization of the interface formation of fullerene (C60) on hafnium (Hf) using x-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The valence band, C 1s and Hf 4f spectra were measured during the deposition of C60 on a clean Hf surface in a stepwise manner. After enough deposition of C60 layers on Hf, XPS measurements indicate that there is no chemical reaction between C60 on Hf, and band bending exists at the C60/Hf interface. From UPS measurements, the energy level difference between Fermi level of Hf and the onset of the highest occupied molecular orbital of C60 is 2.01 eV. The vacuum level of Hf was shifted toward low binding energy (0.95eV) as the C60 deposition. These valence spectra results indicate that there exist an interface dipole and small electron injection barrier at the C 60/Hf interface. We provide the complete energy band diagram of the C60/Hf interface and confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a C60 field-effect transistor.

Original languageEnglish
Title of host publicationOrganic Optoelectronics and Photonics II
DOIs
Publication statusPublished - 2006 Aug 9
EventOrganic Optoelectronics and Photonics II - Strasbourg, France
Duration: 2006 Apr 32006 Apr 6

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6192
ISSN (Print)0277-786X

Other

OtherOrganic Optoelectronics and Photonics II
CountryFrance
CityStrasbourg
Period06/4/306/4/6

Fingerprint

Hafnium
Ultraviolet photoelectron spectroscopy
hafnium
ultraviolet spectroscopy
Energy Levels
Ultraviolet
Electron energy levels
Spectroscopy
Alignment
energy levels
alignment
photoelectron spectroscopy
X rays
x rays
Injection
Electron
Electron injection
Field-effect Transistor
Fullerenes
Binding Energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kim, C. Y., Seo, J. H., Cho, S. W., Yoo, K. H., Whang, C. N., & Kang, S. J. (2006). Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy. In Organic Optoelectronics and Photonics II [619228] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6192). https://doi.org/10.1117/12.663489
Kim, C. Y. ; Seo, J. H. ; Cho, S. W. ; Yoo, K. H. ; Whang, C. N. ; Kang, S. J. / Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy. Organic Optoelectronics and Photonics II. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{d9cca5be944f499a860f8c5281e9eb0c,
title = "Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy",
abstract = "We report the characterization of the interface formation of fullerene (C60) on hafnium (Hf) using x-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The valence band, C 1s and Hf 4f spectra were measured during the deposition of C60 on a clean Hf surface in a stepwise manner. After enough deposition of C60 layers on Hf, XPS measurements indicate that there is no chemical reaction between C60 on Hf, and band bending exists at the C60/Hf interface. From UPS measurements, the energy level difference between Fermi level of Hf and the onset of the highest occupied molecular orbital of C60 is 2.01 eV. The vacuum level of Hf was shifted toward low binding energy (0.95eV) as the C60 deposition. These valence spectra results indicate that there exist an interface dipole and small electron injection barrier at the C 60/Hf interface. We provide the complete energy band diagram of the C60/Hf interface and confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a C60 field-effect transistor.",
author = "Kim, {C. Y.} and Seo, {J. H.} and Cho, {S. W.} and Yoo, {K. H.} and Whang, {C. N.} and Kang, {S. J.}",
year = "2006",
month = "8",
day = "9",
doi = "10.1117/12.663489",
language = "English",
isbn = "0819462489",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Organic Optoelectronics and Photonics II",

}

Kim, CY, Seo, JH, Cho, SW, Yoo, KH, Whang, CN & Kang, SJ 2006, Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy. in Organic Optoelectronics and Photonics II., 619228, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6192, Organic Optoelectronics and Photonics II, Strasbourg, France, 06/4/3. https://doi.org/10.1117/12.663489

Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy. / Kim, C. Y.; Seo, J. H.; Cho, S. W.; Yoo, K. H.; Whang, C. N.; Kang, S. J.

Organic Optoelectronics and Photonics II. 2006. 619228 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6192).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy

AU - Kim, C. Y.

AU - Seo, J. H.

AU - Cho, S. W.

AU - Yoo, K. H.

AU - Whang, C. N.

AU - Kang, S. J.

PY - 2006/8/9

Y1 - 2006/8/9

N2 - We report the characterization of the interface formation of fullerene (C60) on hafnium (Hf) using x-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The valence band, C 1s and Hf 4f spectra were measured during the deposition of C60 on a clean Hf surface in a stepwise manner. After enough deposition of C60 layers on Hf, XPS measurements indicate that there is no chemical reaction between C60 on Hf, and band bending exists at the C60/Hf interface. From UPS measurements, the energy level difference between Fermi level of Hf and the onset of the highest occupied molecular orbital of C60 is 2.01 eV. The vacuum level of Hf was shifted toward low binding energy (0.95eV) as the C60 deposition. These valence spectra results indicate that there exist an interface dipole and small electron injection barrier at the C 60/Hf interface. We provide the complete energy band diagram of the C60/Hf interface and confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a C60 field-effect transistor.

AB - We report the characterization of the interface formation of fullerene (C60) on hafnium (Hf) using x-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The valence band, C 1s and Hf 4f spectra were measured during the deposition of C60 on a clean Hf surface in a stepwise manner. After enough deposition of C60 layers on Hf, XPS measurements indicate that there is no chemical reaction between C60 on Hf, and band bending exists at the C60/Hf interface. From UPS measurements, the energy level difference between Fermi level of Hf and the onset of the highest occupied molecular orbital of C60 is 2.01 eV. The vacuum level of Hf was shifted toward low binding energy (0.95eV) as the C60 deposition. These valence spectra results indicate that there exist an interface dipole and small electron injection barrier at the C 60/Hf interface. We provide the complete energy band diagram of the C60/Hf interface and confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a C60 field-effect transistor.

UR - http://www.scopus.com/inward/record.url?scp=33746730491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746730491&partnerID=8YFLogxK

U2 - 10.1117/12.663489

DO - 10.1117/12.663489

M3 - Conference contribution

AN - SCOPUS:33746730491

SN - 0819462489

SN - 9780819462480

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Organic Optoelectronics and Photonics II

ER -

Kim CY, Seo JH, Cho SW, Yoo KH, Whang CN, Kang SJ. Energy level alignment at C6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy. In Organic Optoelectronics and Photonics II. 2006. 619228. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.663489