Energy-level alignment at the tris-(8-hydroxyquinolate)-aluminum/Gd interface and Gd-electron-injection layer for organic electroluminescent device

Shin Cheul Kim, Soon Nam Kwon, Myung Woon Choi, Chung Nam Whang, Kwangho Jeong, Sam Hyeon Lee, Jae Gyoung Lee, Sunwook Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The energy-level alignment for the tris-(8-hydroxyquinolate)-aluminum (Alq3)/Gd interface is determined by ultraviolet photoemission spectroscopy. The energy difference between the Fermi level in Gd and the low-energy edge of the highest occupied molecular orbital in Alq3 is 2.63 eV, and the vacuum level in the Alq3 layer is moved upward to 0.35 eV with respect to its intrinsic level. Gd/Al, Al:Li (0.1%), and Al were employed as a cathode for the organic electroluminescent device. Among these devices, the device with the Gd-electron-injection layer has operated at the lowest voltage.

Original languageEnglish
Pages (from-to)3726-3728
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number22
DOIs
Publication statusPublished - 2001 Nov 26

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energy levels
alignment
injection
aluminum
electrons
low voltage
molecular orbitals
photoelectric emission
cathodes
vacuum
energy
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Shin Cheul ; Kwon, Soon Nam ; Choi, Myung Woon ; Whang, Chung Nam ; Jeong, Kwangho ; Lee, Sam Hyeon ; Lee, Jae Gyoung ; Kim, Sunwook. / Energy-level alignment at the tris-(8-hydroxyquinolate)-aluminum/Gd interface and Gd-electron-injection layer for organic electroluminescent device. In: Applied Physics Letters. 2001 ; Vol. 79, No. 22. pp. 3726-3728.
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abstract = "The energy-level alignment for the tris-(8-hydroxyquinolate)-aluminum (Alq3)/Gd interface is determined by ultraviolet photoemission spectroscopy. The energy difference between the Fermi level in Gd and the low-energy edge of the highest occupied molecular orbital in Alq3 is 2.63 eV, and the vacuum level in the Alq3 layer is moved upward to 0.35 eV with respect to its intrinsic level. Gd/Al, Al:Li (0.1{\%}), and Al were employed as a cathode for the organic electroluminescent device. Among these devices, the device with the Gd-electron-injection layer has operated at the lowest voltage.",
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Energy-level alignment at the tris-(8-hydroxyquinolate)-aluminum/Gd interface and Gd-electron-injection layer for organic electroluminescent device. / Kim, Shin Cheul; Kwon, Soon Nam; Choi, Myung Woon; Whang, Chung Nam; Jeong, Kwangho; Lee, Sam Hyeon; Lee, Jae Gyoung; Kim, Sunwook.

In: Applied Physics Letters, Vol. 79, No. 22, 26.11.2001, p. 3726-3728.

Research output: Contribution to journalArticle

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AU - Kim, Shin Cheul

AU - Kwon, Soon Nam

AU - Choi, Myung Woon

AU - Whang, Chung Nam

AU - Jeong, Kwangho

AU - Lee, Sam Hyeon

AU - Lee, Jae Gyoung

AU - Kim, Sunwook

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