Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy

J. H. Seo, S. J. Kang, C. Y. Kim, Sangwan Cho, Kyung-hwa Yoo, C. N. Whang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.

Original languageEnglish
Pages (from-to)8015-8017
Number of pages3
JournalApplied Surface Science
Volume252
Issue number22
DOIs
Publication statusPublished - 2006 Sep 15

Fingerprint

Ultraviolet photoelectron spectroscopy
Electron energy levels
Vacuum
Electron injection
Molecular orbitals
Valence bands
Fermi level
Binding energy
Electronic structure
Substrates

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Seo, J. H. ; Kang, S. J. ; Kim, C. Y. ; Cho, Sangwan ; Yoo, Kyung-hwa ; Whang, C. N. / Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy In: Applied Surface Science. 2006 ; Vol. 252, No. 22. pp. 8015-8017.
@article{d36fabbd9896424d815b675e3571baa2,
title = "Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy",
abstract = "The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.",
author = "Seo, {J. H.} and Kang, {S. J.} and Kim, {C. Y.} and Sangwan Cho and Kyung-hwa Yoo and Whang, {C. N.}",
year = "2006",
month = "9",
day = "15",
doi = "10.1016/j.apsusc.2005.12.095",
language = "English",
volume = "252",
pages = "8015--8017",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "22",

}

Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy . / Seo, J. H.; Kang, S. J.; Kim, C. Y.; Cho, Sangwan; Yoo, Kyung-hwa; Whang, C. N.

In: Applied Surface Science, Vol. 252, No. 22, 15.09.2006, p. 8015-8017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy

AU - Seo, J. H.

AU - Kang, S. J.

AU - Kim, C. Y.

AU - Cho, Sangwan

AU - Yoo, Kyung-hwa

AU - Whang, C. N.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.

AB - The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.

UR - http://www.scopus.com/inward/record.url?scp=33747885686&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747885686&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.12.095

DO - 10.1016/j.apsusc.2005.12.095

M3 - Article

AN - SCOPUS:33747885686

VL - 252

SP - 8015

EP - 8017

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 22

ER -