Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3

Kwanwook Jung, Soohyung Park, Younjoo Lee, Yungsik Youn, Hae In Shin, Han Ki Kim, Hyunbok Lee, Yeonjin Yi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

Original languageEnglish
Pages (from-to)625-630
Number of pages6
JournalApplied Surface Science
Volume387
DOIs
Publication statusPublished - 2016 Nov 30

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Diamines
Electron energy levels
X ray photoelectron spectroscopy
Oxygen vacancies
Optoelectronic devices
Electronic structure
Anodes
diphenyl
4-nitrophenethyl bromide
Ultraviolet Rays

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Jung, Kwanwook ; Park, Soohyung ; Lee, Younjoo ; Youn, Yungsik ; Shin, Hae In ; Kim, Han Ki ; Lee, Hyunbok ; Yi, Yeonjin. / Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3 In: Applied Surface Science. 2016 ; Vol. 387. pp. 625-630.
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title = "Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3",
abstract = "The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.",
author = "Kwanwook Jung and Soohyung Park and Younjoo Lee and Yungsik Youn and Shin, {Hae In} and Kim, {Han Ki} and Hyunbok Lee and Yeonjin Yi",
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Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3 . / Jung, Kwanwook; Park, Soohyung; Lee, Younjoo; Youn, Yungsik; Shin, Hae In; Kim, Han Ki; Lee, Hyunbok; Yi, Yeonjin.

In: Applied Surface Science, Vol. 387, 30.11.2016, p. 625-630.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3

AU - Jung, Kwanwook

AU - Park, Soohyung

AU - Lee, Younjoo

AU - Youn, Yungsik

AU - Shin, Hae In

AU - Kim, Han Ki

AU - Lee, Hyunbok

AU - Yi, Yeonjin

PY - 2016/11/30

Y1 - 2016/11/30

N2 - The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

AB - The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

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