Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

Doo Sung Lee, Yong Hun Sung, In Gun Lee, Jong Gi Kim, Hyunchul Sohn, Dae Hong Ko

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.

Original languageEnglish
Pages (from-to)997-1001
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume102
Issue number4
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Durability
Reactive sputtering
Voltage measurement
Electric current measurement
Heat treatment
Oxygen
Transmission electron microscopy
Data storage equipment
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Lee, Doo Sung ; Sung, Yong Hun ; Lee, In Gun ; Kim, Jong Gi ; Sohn, Hyunchul ; Ko, Dae Hong. / Enhanced bipolar resistive switching of HfO2 with a Ti interlayer. In: Applied Physics A: Materials Science and Processing. 2011 ; Vol. 102, No. 4. pp. 997-1001.
@article{b71e3e80ae61402fa898708ef74f4814,
title = "Enhanced bipolar resistive switching of HfO2 with a Ti interlayer",
abstract = "The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.",
author = "Lee, {Doo Sung} and Sung, {Yong Hun} and Lee, {In Gun} and Kim, {Jong Gi} and Hyunchul Sohn and Ko, {Dae Hong}",
year = "2011",
month = "3",
day = "1",
doi = "10.1007/s00339-011-6312-5",
language = "English",
volume = "102",
pages = "997--1001",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
number = "4",

}

Enhanced bipolar resistive switching of HfO2 with a Ti interlayer. / Lee, Doo Sung; Sung, Yong Hun; Lee, In Gun; Kim, Jong Gi; Sohn, Hyunchul; Ko, Dae Hong.

In: Applied Physics A: Materials Science and Processing, Vol. 102, No. 4, 01.03.2011, p. 997-1001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

AU - Lee, Doo Sung

AU - Sung, Yong Hun

AU - Lee, In Gun

AU - Kim, Jong Gi

AU - Sohn, Hyunchul

AU - Ko, Dae Hong

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.

AB - The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.

UR - http://www.scopus.com/inward/record.url?scp=79958072102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958072102&partnerID=8YFLogxK

U2 - 10.1007/s00339-011-6312-5

DO - 10.1007/s00339-011-6312-5

M3 - Article

AN - SCOPUS:79958072102

VL - 102

SP - 997

EP - 1001

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 4

ER -