The characteristics of resistive switching of TiN/HfO2/Ti/ HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during the reactive sputtering of HfO2 films. The current-voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfOx interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks.
|Number of pages||5|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2011 Mar 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)