Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation

Pyo Jin Jeon, Sung Wook Min, Jin Sung Kim, Syed Raza Ali Raza, Kyunghee Choi, Hee Sung Lee, Young Tack Lee, Do Kyung Hwang, Hyoung Joon Choi, Seongil Im

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51 Citations (Scopus)

Abstract

Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO2/p+-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted. This journal is

Original languageEnglish
Pages (from-to)2751-2758
Number of pages8
JournalJournal of Materials Chemistry C
Volume3
Issue number12
DOIs
Publication statusPublished - 2015 Mar 28

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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    Jeon, P. J., Min, S. W., Kim, J. S., Raza, S. R. A., Choi, K., Lee, H. S., Lee, Y. T., Hwang, D. K., Choi, H. J., & Im, S. (2015). Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation. Journal of Materials Chemistry C, 3(12), 2751-2758. https://doi.org/10.1039/c4tc02961e