Enhanced device performances of WSe 2 -MoS 2 van der Waals junction p-n diode by fluoropolymer encapsulation

Pyo Jin Jeon, Sung Wook Min, Jin Sung Kim, Syed Raza Ali Raza, Kyunghee Choi, Hee Sung Lee, Young Tack Lee, Do Kyung Hwang, Hyoung Joon Choi, Seongil Im

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Two-dimensional heterojunction diodes with WSe 2 and MoS 2 nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO 2 /p + -Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted. This journal is

Original languageEnglish
Pages (from-to)2751-2758
Number of pages8
JournalJournal of Materials Chemistry C
Volume3
Issue number12
DOIs
Publication statusPublished - 2015 Mar 28

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Fluorine containing polymers
Encapsulation
Diodes
Glass
Heterojunctions
Electrostatics
Aging of materials
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Jeon, Pyo Jin ; Min, Sung Wook ; Kim, Jin Sung ; Raza, Syed Raza Ali ; Choi, Kyunghee ; Lee, Hee Sung ; Lee, Young Tack ; Hwang, Do Kyung ; Choi, Hyoung Joon ; Im, Seongil. / Enhanced device performances of WSe 2 -MoS 2 van der Waals junction p-n diode by fluoropolymer encapsulation In: Journal of Materials Chemistry C. 2015 ; Vol. 3, No. 12. pp. 2751-2758.
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Enhanced device performances of WSe 2 -MoS 2 van der Waals junction p-n diode by fluoropolymer encapsulation . / Jeon, Pyo Jin; Min, Sung Wook; Kim, Jin Sung; Raza, Syed Raza Ali; Choi, Kyunghee; Lee, Hee Sung; Lee, Young Tack; Hwang, Do Kyung; Choi, Hyoung Joon; Im, Seongil.

In: Journal of Materials Chemistry C, Vol. 3, No. 12, 28.03.2015, p. 2751-2758.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced device performances of WSe 2 -MoS 2 van der Waals junction p-n diode by fluoropolymer encapsulation

AU - Jeon, Pyo Jin

AU - Min, Sung Wook

AU - Kim, Jin Sung

AU - Raza, Syed Raza Ali

AU - Choi, Kyunghee

AU - Lee, Hee Sung

AU - Lee, Young Tack

AU - Hwang, Do Kyung

AU - Choi, Hyoung Joon

AU - Im, Seongil

PY - 2015/3/28

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AB - Two-dimensional heterojunction diodes with WSe 2 and MoS 2 nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO 2 /p + -Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted. This journal is

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