Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation

Pyo Jin Jeon; Sung Wook Min; Jin Sung Kim; Syed Raza Ali Raza; Kyunghee Choi; Hee Sung Lee; Young Tack Lee; Do Kyung Hwang; Hyoung Joon Choi; Seongil Im

doi:10.1039/c4tc02961e

Enhanced device performances of WSe₂-MoS₂ van der Waals junction p-n diode by fluoropolymer encapsulation

Pyo Jin Jeon, Sung Wook Min, Jin Sung Kim, Syed Raza Ali Raza, Kyunghee Choi, Hee Sung Lee, Young Tack Lee, Do Kyung Hwang, Hyoung Joon Choi, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

Two-dimensional heterojunction diodes with WSe₂ and MoS₂ nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO₂/p⁺-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted.

Original language	English
Pages (from-to)	2751-2758
Number of pages	8
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	12
DOIs	https://doi.org/10.1039/c4tc02961e
Publication status	Published - 2015 Mar 28

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2015.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Chemistry

Access to Document

10.1039/c4tc02961e

Cite this

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title = "Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation",

abstract = "Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO2/p+-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted.",

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note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2015.",

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doi = "10.1039/c4tc02961e",

language = "English",

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T1 - Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation

AU - Jeon, Pyo Jin

AU - Min, Sung Wook

AU - Kim, Jin Sung

AU - Raza, Syed Raza Ali

AU - Choi, Kyunghee

AU - Lee, Hee Sung

AU - Lee, Young Tack

AU - Hwang, Do Kyung

AU - Choi, Hyoung Joon

AU - Im, Seongil

PY - 2015/3/28

Y1 - 2015/3/28

N2 - Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO2/p+-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted.

AB - Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO2/p+-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted.

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