Enhanced electrical and optical properties of singlelayered MoS2 by incorporation of aluminum

Hyungjun Kim, Suk Yang, Hojoong Kim, Jin Young Moon, Kyung Park, Yun Jin Park, Jang-Yeon Kwon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electrical and optical enhancements of single-layer semiconducting materials such as transition metal dichalcogenides have recently been studied to achieve sensitive properties via external treatments, such as the formation of organic/ inorganic protecting layers on field-effect transistors (FETs), thermal annealing, and nano-dot doping of sensors and detectors. Here, we propose a new analytical approach to electrical and optical enhancement through a passivation process using atomic layer deposition (ALD), and demonstrate a synthesized MoS2 monolayer incorporated with Al atoms in an Al2O3 passivation layer. The incorporated Al atoms in the MoS2 monolayer are clearly observed by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) and TEM-energy-dispersive X-ray spectroscopy results. We demonstrate that the chemically incorporated FETs exhibit highly enhanced mobilities of approximately 3.7 cm2·V−1·s−1, forty times greater than that of as-synthesized MoS2, with a threefold improvement in the photoluminescence properties.

Original languageEnglish
Pages (from-to)731-740
Number of pages10
JournalNano Research
Volume11
Issue number2
DOIs
Publication statusPublished - 2018 Feb 1

Fingerprint

Field effect transistors
Aluminum
Passivation
Monolayers
Electric properties
Optical properties
Transmission electron microscopy
Atoms
Atomic layer deposition
Aberrations
Transition metals
Photoluminescence
Doping (additives)
Annealing
Detectors
Scanning electron microscopy
Sensors
X-Ray Emission Spectrometry
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Kim, Hyungjun ; Yang, Suk ; Kim, Hojoong ; Moon, Jin Young ; Park, Kyung ; Park, Yun Jin ; Kwon, Jang-Yeon. / Enhanced electrical and optical properties of singlelayered MoS2 by incorporation of aluminum. In: Nano Research. 2018 ; Vol. 11, No. 2. pp. 731-740.
@article{3d44515ab0374eba90d7dc50eec7e768,
title = "Enhanced electrical and optical properties of singlelayered MoS2 by incorporation of aluminum",
abstract = "Electrical and optical enhancements of single-layer semiconducting materials such as transition metal dichalcogenides have recently been studied to achieve sensitive properties via external treatments, such as the formation of organic/ inorganic protecting layers on field-effect transistors (FETs), thermal annealing, and nano-dot doping of sensors and detectors. Here, we propose a new analytical approach to electrical and optical enhancement through a passivation process using atomic layer deposition (ALD), and demonstrate a synthesized MoS2 monolayer incorporated with Al atoms in an Al2O3 passivation layer. The incorporated Al atoms in the MoS2 monolayer are clearly observed by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) and TEM-energy-dispersive X-ray spectroscopy results. We demonstrate that the chemically incorporated FETs exhibit highly enhanced mobilities of approximately 3.7 cm2·V−1·s−1, forty times greater than that of as-synthesized MoS2, with a threefold improvement in the photoluminescence properties.",
author = "Hyungjun Kim and Suk Yang and Hojoong Kim and Moon, {Jin Young} and Kyung Park and Park, {Yun Jin} and Jang-Yeon Kwon",
year = "2018",
month = "2",
day = "1",
doi = "10.1007/s12274-017-1682-4",
language = "English",
volume = "11",
pages = "731--740",
journal = "Nano Research",
issn = "1998-0124",
publisher = "Press of Tsinghua University",
number = "2",

}

Enhanced electrical and optical properties of singlelayered MoS2 by incorporation of aluminum. / Kim, Hyungjun; Yang, Suk; Kim, Hojoong; Moon, Jin Young; Park, Kyung; Park, Yun Jin; Kwon, Jang-Yeon.

In: Nano Research, Vol. 11, No. 2, 01.02.2018, p. 731-740.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced electrical and optical properties of singlelayered MoS2 by incorporation of aluminum

AU - Kim, Hyungjun

AU - Yang, Suk

AU - Kim, Hojoong

AU - Moon, Jin Young

AU - Park, Kyung

AU - Park, Yun Jin

AU - Kwon, Jang-Yeon

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Electrical and optical enhancements of single-layer semiconducting materials such as transition metal dichalcogenides have recently been studied to achieve sensitive properties via external treatments, such as the formation of organic/ inorganic protecting layers on field-effect transistors (FETs), thermal annealing, and nano-dot doping of sensors and detectors. Here, we propose a new analytical approach to electrical and optical enhancement through a passivation process using atomic layer deposition (ALD), and demonstrate a synthesized MoS2 monolayer incorporated with Al atoms in an Al2O3 passivation layer. The incorporated Al atoms in the MoS2 monolayer are clearly observed by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) and TEM-energy-dispersive X-ray spectroscopy results. We demonstrate that the chemically incorporated FETs exhibit highly enhanced mobilities of approximately 3.7 cm2·V−1·s−1, forty times greater than that of as-synthesized MoS2, with a threefold improvement in the photoluminescence properties.

AB - Electrical and optical enhancements of single-layer semiconducting materials such as transition metal dichalcogenides have recently been studied to achieve sensitive properties via external treatments, such as the formation of organic/ inorganic protecting layers on field-effect transistors (FETs), thermal annealing, and nano-dot doping of sensors and detectors. Here, we propose a new analytical approach to electrical and optical enhancement through a passivation process using atomic layer deposition (ALD), and demonstrate a synthesized MoS2 monolayer incorporated with Al atoms in an Al2O3 passivation layer. The incorporated Al atoms in the MoS2 monolayer are clearly observed by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) and TEM-energy-dispersive X-ray spectroscopy results. We demonstrate that the chemically incorporated FETs exhibit highly enhanced mobilities of approximately 3.7 cm2·V−1·s−1, forty times greater than that of as-synthesized MoS2, with a threefold improvement in the photoluminescence properties.

UR - http://www.scopus.com/inward/record.url?scp=85027095855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027095855&partnerID=8YFLogxK

U2 - 10.1007/s12274-017-1682-4

DO - 10.1007/s12274-017-1682-4

M3 - Article

AN - SCOPUS:85027095855

VL - 11

SP - 731

EP - 740

JO - Nano Research

JF - Nano Research

SN - 1998-0124

IS - 2

ER -