Enhanced electrical characteristics and stability via simultaneous ultraviolet and thermal treatment of passivated amorphous In-Ga-Zn-O thin-film transistors

Young Jun Tak, Doo Hyun Yoon, Seokhyun Yoon, Uy Hyun Choi, Mardhiah Muhamad Sabri, Byung Du Ahn, Hyun Jae Kim

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Abstract

We developed a method to improve the electrical performance and stability of passivated amorphous In-Ga-Zn-O thin-film transistors by simultaneous ultraviolet and thermal (SUT) treatment. SUT treatment was carried out on fully fabricated thin-film transistors, including deposited source/drain and passivation layers. Ultraviolet (UV) irradiation disassociated weak and diatomic chemical bonds and generated defects, and simultaneous thermal annealing rearranged the defects. The SUT treatment promoted densification and condensation of the channel layer by decreasing the concentration of oxygen-vacancy-related defects and increasing the concentration of metal-oxide bonds. The SUT-treated devices exhibited improved electrical properties compared to nontreated devices: field-effect mobility increased from 5.46 to 13.36 V·s, sub-threshold swing decreased from 0.49 to 0.32 V/decade, and threshold voltage shift (for positive bias temperature stress) was reduced from 5.1 to 1.9 V.

Original languageEnglish
Pages (from-to)6399-6405
Number of pages7
JournalACS Applied Materials and Interfaces
Volume6
Issue number9
DOIs
Publication statusPublished - 2014 May 14

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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