Enhanced electrical properties of pulsed laser-deposited CuIn0.7Ga0.3Se2 thin films via processing control

Yeon Hwa Jo, Bhaskar Chandra Mohanty, Yong Soo Cho

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Polycrystalline CuIn0.7Ga0.3Se2 thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65° to 0.54°. Slightly Cu-rich surface with Cu2-xSe phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of ~1018cm-3 and resistivity of 10-1Ωcm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu2-xSe phase and diffusion of Na from substrates to films.

Original languageEnglish
Pages (from-to)2213-2218
Number of pages6
JournalSolar Energy
Volume84
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Pulsed lasers
Electric properties
Thin films
Substrates
Processing
Temperature
Lasers
Pulsed laser deposition
Full width at half maximum
Lime
Carrier concentration
Raman scattering
Crystalline materials
Glass

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

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abstract = "Polycrystalline CuIn0.7Ga0.3Se2 thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65° to 0.54°. Slightly Cu-rich surface with Cu2-xSe phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of ~1018cm-3 and resistivity of 10-1Ωcm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu2-xSe phase and diffusion of Na from substrates to films.",
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Enhanced electrical properties of pulsed laser-deposited CuIn0.7Ga0.3Se2 thin films via processing control. / Jo, Yeon Hwa; Mohanty, Bhaskar Chandra; Cho, Yong Soo.

In: Solar Energy, Vol. 84, No. 12, 01.12.2010, p. 2213-2218.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced electrical properties of pulsed laser-deposited CuIn0.7Ga0.3Se2 thin films via processing control

AU - Jo, Yeon Hwa

AU - Mohanty, Bhaskar Chandra

AU - Cho, Yong Soo

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N2 - Polycrystalline CuIn0.7Ga0.3Se2 thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65° to 0.54°. Slightly Cu-rich surface with Cu2-xSe phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of ~1018cm-3 and resistivity of 10-1Ωcm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu2-xSe phase and diffusion of Na from substrates to films.

AB - Polycrystalline CuIn0.7Ga0.3Se2 thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65° to 0.54°. Slightly Cu-rich surface with Cu2-xSe phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of ~1018cm-3 and resistivity of 10-1Ωcm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu2-xSe phase and diffusion of Na from substrates to films.

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