Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer

Joong Tark Han, Beom Joon Kim, Bo Gyeong Kim, Jun Suk Kim, Bo Hwa Jeong, Seung Yol Jeong, Hee Jin Jeong, Jeong Ho Cho, Geon Woong Lee

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Wrinkle-free reduced graphene oxide (rGO)/TiO2 hybrid multilayer films were directly fabricated using an rGO solution stabilized by a TiO 2 precursor sol applied over a large area by an air spraying method without the use of additional reduction processes. In-situ insertion of the TiO2 layer between rGO sheets dramatically increased the conductivity and carrier mobility despite the insulating properties of amorphous TiO 2. The TiO2 situated between rGO sheets also induced significant hole doping. Electrical hysteresis caused by adsorbed water molecules and residual oxidative moieties in the rGO nanosheets vanished due to TiO2-assisted screening of charged impurities. These effects decreased the thermal carrier activation energy and increased the density of states at the Fermi level. Ambipolar transport properties were converted into unipolar-like hole transport characteristics by extensive hole doping in the TiO2 layer.

Original languageEnglish
Pages (from-to)8884-8891
Number of pages8
JournalACS Nano
Volume5
Issue number11
DOIs
Publication statusPublished - 2011 Nov 22

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Graphite
Multilayer films
Oxides
Graphene
Oxide films
insertion
graphene
Electric properties
electrical properties
oxides
Doping (additives)
Electron transport properties
Nanosheets
Carrier mobility
spraying
Polymethyl Methacrylate
Spraying
Sols
carrier mobility
Fermi level

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Han, J. T., Kim, B. J., Kim, B. G., Kim, J. S., Jeong, B. H., Jeong, S. Y., ... Lee, G. W. (2011). Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer. ACS Nano, 5(11), 8884-8891. https://doi.org/10.1021/nn203054t
Han, Joong Tark ; Kim, Beom Joon ; Kim, Bo Gyeong ; Kim, Jun Suk ; Jeong, Bo Hwa ; Jeong, Seung Yol ; Jeong, Hee Jin ; Cho, Jeong Ho ; Lee, Geon Woong. / Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer. In: ACS Nano. 2011 ; Vol. 5, No. 11. pp. 8884-8891.
@article{ea457dc31d0044418ace3e83fb422cee,
title = "Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer",
abstract = "Wrinkle-free reduced graphene oxide (rGO)/TiO2 hybrid multilayer films were directly fabricated using an rGO solution stabilized by a TiO 2 precursor sol applied over a large area by an air spraying method without the use of additional reduction processes. In-situ insertion of the TiO2 layer between rGO sheets dramatically increased the conductivity and carrier mobility despite the insulating properties of amorphous TiO 2. The TiO2 situated between rGO sheets also induced significant hole doping. Electrical hysteresis caused by adsorbed water molecules and residual oxidative moieties in the rGO nanosheets vanished due to TiO2-assisted screening of charged impurities. These effects decreased the thermal carrier activation energy and increased the density of states at the Fermi level. Ambipolar transport properties were converted into unipolar-like hole transport characteristics by extensive hole doping in the TiO2 layer.",
author = "Han, {Joong Tark} and Kim, {Beom Joon} and Kim, {Bo Gyeong} and Kim, {Jun Suk} and Jeong, {Bo Hwa} and Jeong, {Seung Yol} and Jeong, {Hee Jin} and Cho, {Jeong Ho} and Lee, {Geon Woong}",
year = "2011",
month = "11",
day = "22",
doi = "10.1021/nn203054t",
language = "English",
volume = "5",
pages = "8884--8891",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "11",

}

Han, JT, Kim, BJ, Kim, BG, Kim, JS, Jeong, BH, Jeong, SY, Jeong, HJ, Cho, JH & Lee, GW 2011, 'Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer', ACS Nano, vol. 5, no. 11, pp. 8884-8891. https://doi.org/10.1021/nn203054t

Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer. / Han, Joong Tark; Kim, Beom Joon; Kim, Bo Gyeong; Kim, Jun Suk; Jeong, Bo Hwa; Jeong, Seung Yol; Jeong, Hee Jin; Cho, Jeong Ho; Lee, Geon Woong.

In: ACS Nano, Vol. 5, No. 11, 22.11.2011, p. 8884-8891.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer

AU - Han, Joong Tark

AU - Kim, Beom Joon

AU - Kim, Bo Gyeong

AU - Kim, Jun Suk

AU - Jeong, Bo Hwa

AU - Jeong, Seung Yol

AU - Jeong, Hee Jin

AU - Cho, Jeong Ho

AU - Lee, Geon Woong

PY - 2011/11/22

Y1 - 2011/11/22

N2 - Wrinkle-free reduced graphene oxide (rGO)/TiO2 hybrid multilayer films were directly fabricated using an rGO solution stabilized by a TiO 2 precursor sol applied over a large area by an air spraying method without the use of additional reduction processes. In-situ insertion of the TiO2 layer between rGO sheets dramatically increased the conductivity and carrier mobility despite the insulating properties of amorphous TiO 2. The TiO2 situated between rGO sheets also induced significant hole doping. Electrical hysteresis caused by adsorbed water molecules and residual oxidative moieties in the rGO nanosheets vanished due to TiO2-assisted screening of charged impurities. These effects decreased the thermal carrier activation energy and increased the density of states at the Fermi level. Ambipolar transport properties were converted into unipolar-like hole transport characteristics by extensive hole doping in the TiO2 layer.

AB - Wrinkle-free reduced graphene oxide (rGO)/TiO2 hybrid multilayer films were directly fabricated using an rGO solution stabilized by a TiO 2 precursor sol applied over a large area by an air spraying method without the use of additional reduction processes. In-situ insertion of the TiO2 layer between rGO sheets dramatically increased the conductivity and carrier mobility despite the insulating properties of amorphous TiO 2. The TiO2 situated between rGO sheets also induced significant hole doping. Electrical hysteresis caused by adsorbed water molecules and residual oxidative moieties in the rGO nanosheets vanished due to TiO2-assisted screening of charged impurities. These effects decreased the thermal carrier activation energy and increased the density of states at the Fermi level. Ambipolar transport properties were converted into unipolar-like hole transport characteristics by extensive hole doping in the TiO2 layer.

UR - http://www.scopus.com/inward/record.url?scp=81855227291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855227291&partnerID=8YFLogxK

U2 - 10.1021/nn203054t

DO - 10.1021/nn203054t

M3 - Article

C2 - 22017193

AN - SCOPUS:81855227291

VL - 5

SP - 8884

EP - 8891

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 11

ER -